中国物理B ›› 2013, Vol. 22 ›› Issue (7): 78901-078901.doi: 10.1088/1674-1056/22/7/078901

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

SPICE modeling of flux-controlled unipolar memristive devices

方旭东a, 唐玉华b, 吴俊杰a, 朱玄a, 周静a, 黄达a   

  1. a State Key Laboratory of High Performance Computing, School of Computer, National University of Defense Technology, Changsha 410073, China;
    b Department of Computer Science and Technology, School of Computer, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2012-12-29 修回日期:2013-01-28 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60921062, 61003082, and 61272146).

SPICE modeling of flux-controlled unipolar memristive devices

Fang Xu-Dong (方旭东)a, Tang Yu-Hua (唐玉华)b, Wu Jun-Jie (吴俊杰)a, Zhu Xuan (朱玄)a, Zhou Jing (周静)a, Huang Da (黄达)a   

  1. a State Key Laboratory of High Performance Computing, School of Computer, National University of Defense Technology, Changsha 410073, China;
    b Department of Computer Science and Technology, School of Computer, National University of Defense Technology, Changsha 410073, China
  • Received:2012-12-29 Revised:2013-01-28 Online:2013-06-01 Published:2013-06-01
  • Contact: Fang Xu-Dong E-mail:fangxudong850403@gmail.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60921062, 61003082, and 61272146).

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摘要： Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that our model caters to the real device data very well, thus demonstrating that our model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.

关键词: unipolar memristive devices, memristive, SPICE model

Abstract: Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that our model caters to the real device data very well, thus demonstrating that our model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.

Key words: unipolar memristive devices, memristive, SPICE model

中图分类号:  (Computer science and technology)

  • 89.20.Ff
85.40.Bh (Computer-aided design of microcircuits; layout and modeling) 85.35.-p (Nanoelectronic devices) 84.32.-y (Passive circuit components)