Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

doi:10.1088/1674-1056/25/11/117301

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117301-117301.doi: 10.1088/1674-1056/25/11/117301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华)

1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2016-07-06 修回日期:2016-08-10 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn

Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

Miao Geng(耿苗)^1,2, Pei-Xian Li(李培咸)¹, Wei-Jun Luo(罗卫军)², Peng-Peng Sun(孙朋朋)², Rong Zhang(张蓉)^1,2, Xiao-Hua Ma(马晓华)¹

1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2016-07-06 Revised:2016-08-10 Online:2016-11-05 Published:2016-11-05
Contact: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn

摘要/Abstract

摘要： A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor (HEMT) switch. The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range. The percentage errors E_ij within 3.83% show the great agreement between the simulated S-parameters and the measured data.

关键词: GaN high-electron-mobility transistor switch, small signal modeling, parameter extraction, error percentage

Abstract: A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor (HEMT) switch. The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range. The percentage errors E_ij within 3.83% show the great agreement between the simulated S-parameters and the measured data.

Key words: GaN high-electron-mobility transistor switch, small signal modeling, parameter extraction, error percentage

中图分类号: (III-V semiconductors)

73.61.Ey

85.30.De (Semiconductor-device characterization, design, and modeling) 85.40.Bh (Computer-aided design of microcircuits; layout and modeling) 84.40.-x (Radiowave and microwave (including millimeter wave) technology)

耿苗, 李培咸, 罗卫军, 孙朋朋, 张蓉, 马晓华. Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method[J]. 中国物理B, 2016, 25(11): 117301-117301.

Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华). Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method[J]. Chin. Phys. B, 2016, 25(11): 117301-117301.

参考文献 27

[1]	Drozdovski N V and Caverly R H 2002 IEEE Transactions on Microwave Theory and Techniques 50 4
[2]	Bettidi A, Cetronio A, De Dominicis M, Giolo G, Lanzieri C, Manna A, Peroni M, Proietti C and Romanini P 2008 IEEE Radio Frequency Integrated Circuits Symposium 329
[3]	Chu F T, Chen C, Zhou W and Liu X Z 2013 Chin. Phys. Lett. 30 097303
[4]	Tiwat P, Pang L, Yuan T T and Liu X Y 2014 Chin. Phys. B 23 127304
[5]	Brady R G, Oxley C H and Brazil T J 2008 IEEE Transactions on Microwave Theory & Techniques 56 1535
[6]	Wu Y F, Keller S, Kozodoy P, Keller B P, Parikh P, Kapolnek D, Denbaars S P and Mishra U K 1997 IEEE Electron Device Lett. 18 290
[7]	Wu M, Zheng D Y, Wang Y, Chen W W, Zhang K, Ma X H, Zhang J C and Hao Y 2014 Chin. Phys. B 23 097307
[8]	Esposto M, Chini A and Rajan S 2011 IEEE Transactions on Electron Devices 58 1456
[9]	Campbell C F and Dumka D C 2010 Microwave Symposium Digest (MTT) 145
[10]	Kharabi F 2012 Compound Semiconductor Integrated Circuit Symposium (CSICS) IEEE 1
[11]	Pla J A and Struble W 1993 Microwave Symposium Digest 641
[12]	Shen L, Chen B and Gao J 2014 International Journal of RF and Microwave Computer-Aided Engineering 24 464
[13]	Sang L, Xu Y, Chen Y, Guo Y and Xu R M 2011 Progress in Electromagnetics Research Letters 20 27
[14]	Lu J, Wang Y, Ma L and Zhi P Y 2008 Solid-State Electronics 52 115
[15]	Dambrine G, Cappy A, Heliodore F and Playez E 1988 IEEE Transactions on Microwave Theory & Techniques 36 1151
[16]	Pang X F and Shen Y 2008 Solid-State and Integrated-Circuit Technology ICSICT 1400
[17]	Zhou J, Chang H, Zhang X F, Yang J Z, Zeng Z H, Xu Y, Liu H G, Li Q, Xu W J and Li H O 2014 Solid-State and Integrated Circuit Technology (ICSICT) 1
[18]	Zhen W B, Li F Q, Li H, Sheng Y, Pan X F and Sheng H C 2008 Research & Progress of SSE 28 372
[19]	Gao X B, Du H Y, Wang X Y, Zhao J, Wang T X, Han L H and Gao C Z 2000 Semiconductor Information 1 020
[20]	Chen X Y, Xu Q S, Chen J Y, Chen X J, Hao X P, Li F X and Jiang Y Q 2003 Research & Progress of Solid State Electronics 2 013
[21]	Liu S, Yao Z, Zhao R and Song X F 2012 Semiconductor Technology 37 347
[22]	Campbell C F and Dumka D C 2010 Microwave Symposium Digest (MTT) 145
[23]	Ren C J, Shen H C, Li Z H, Chen T H, Zhang B and Gao T 2015 Journal of Semiconductors 36 014008
[24]	Caddemi A, Crupi G and Donato N 2004 Microelectronics Journal 35 431
[25]	Massimo P, Guillermo F, Ahmed A, Giorgio V, Monica B, Enrique S and Dominique S 2005 ARFTG Conference Digest Spring 65rm th
[26]	Gao J 2009 RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors (New York:SciTech Publisher) pp. 1-346
[27]	Jarndal A, Aflaki P, Degachi L, Birafane A, Kouki A, Negra R and Ghannouchi FM 2010 Solid-State Electronics 54 696

Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

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