中国物理B ›› 2006, Vol. 15 ›› Issue (11): 2742-2745.doi: 10.1088/1009-1963/15/11/047

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

New aspects of HCI test for ultra-short channel n-MOSFET devices

王剑屏1, 马晓华2, 郝跃2, 曹艳荣2, 陈海峰2   

  1. (1)Logic Technology Development Center, SMIC, Shanghai 201203, China; (2)Microelectronics Institute, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University, Xi'an 710071, China
  • 收稿日期:2006-04-12 修回日期:2006-06-22 出版日期:2006-11-20 发布日期:2006-11-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60376024).

New aspects of HCI test for ultra-short channel n-MOSFET devices

Ma Xiao-Hua(马晓华)a)b)†, Hao Yue(郝跃)a)b), Wang Jian-Ping(王剑屏)c), Cao Yan-Rong(曹艳荣)a)b), and Chen Hai-Feng(陈海峰)a)b)   

  1. a Microelectronics Institute, Xidian University, Xi'an 710071, China; b Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University, Xi'an 710071, China; c Logic Technology Development Center, SMIC, Shanghai 201203, China
  • Received:2006-04-12 Revised:2006-06-22 Online:2006-11-20 Published:2006-11-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60376024).

PDF (PC)

783

赞

摘要： Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices (75--90\,nm), which does not fit formal degradation power law well, will bring severe error in lifetime prediction. This phenomenon usually happens under high drain voltage ($V_{\rm d}$) stress condition. A new model was presented to fit the degradation curve better. It was observed that the peak of the substrate current under low drain voltage stress cannot be found in ultra-short channel device. Devices with different channel lengths were studied under different $V_{\rm d}$ stresses in order to understand the relations between peak of substrate current ($I_{\rm sub}$) and channel length/stress voltage.

Abstract: Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices (75--90 nm), which does not fit formal degradation power law well, will bring severe error in lifetime prediction. This phenomenon usually happens under high drain voltage ($V_{\rm d}$) stress condition. A new model was presented to fit the degradation curve better. It was observed that the peak of the substrate current under low drain voltage stress cannot be found in ultra-short channel device. Devices with different channel lengths were studied under different $V_{\rm d}$ stresses in order to understand the relations between peak of substrate current ($I_{\rm sub}$) and channel length/stress voltage.

Key words: HCI, n-MOSFET, short channel

中图分类号:  (Field effect devices)

  • 85.30.Tv
72.20.Ht (High-field and nonlinear effects) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.De (Semiconductor-device characterization, design, and modeling)