中国物理B ›› 2006, Vol. 15 ›› Issue (11): 2735-2741.doi: 10.1088/1009-1963/15/11/046

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Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs

李东临, 曾一平   

  1. Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2006-03-21 修回日期:2006-07-05 出版日期:2006-11-20 发布日期:2006-11-20

Self-consistent analysis of double-$\delta$-doped InAlAs/InGaAs/InP HEMTs

Li Dong-Lin(李东临)† and Zeng Yi-Ping(曾一平）   

  1. Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2006-03-21 Revised:2006-07-05 Online:2006-11-20 Published:2006-11-20

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摘要： We have carried out a theoretical study of double-$\delta$-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas (2DEG) and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be $5\times 10^{12}$ and $3\times 10^{12}$~cm$^{ - 2}$ for the upper and lower impurity layers, respectively, in the double-$\delta$-doped InAlAs/InGaAs/InP HEMTs.

关键词: two-dimensional electron gas, high electron mobility transistor, self-consistent calculation, \\hspace*{1.9cm} InAlAs/InGaAs heterostructure

Abstract: We have carried out a theoretical study of double-$\delta$-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas (2DEG) and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be $5\times 10^{12}$ and $3\times 10^{12}$ cm$^{ - 2}$ for the upper and lower impurity layers, respectively, in the double-$\delta$-doped InAlAs/InGaAs/InP HEMTs.

Key words: two-dimensional electron gas, high electron mobility transistor, self-consistent calculation, InAlAs/InGaAs heterostructure

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 71.15.Mb (Density functional theory, local density approximation, gradient and other corrections) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ey (III-V semiconductors)