中国物理B ›› 1998, Vol. 7 ›› Issue (9): 695-702.doi: 10.1088/1004-423X/7/9/008
贾全杰1, 郑文莉1, 王洲光1, 王俊1, 姜晓明1, 蒋最敏2, 裴成文2, 秦捷2, 胡冬枝2
Jia Quan-jie (贾全杰)a, Zheng Wen-li (郑文莉)a, Wang Zhou-guang (王洲光)a, Wang Jun (王俊)a, Jiang Xiao-ming (姜晓明)a, Jiang Zui-min (蒋最敏)b, Pei Cheng-wen (裴成文)b, Qin Jie (秦捷)b, Hu Dong-zhi (胡冬枝)b
摘要: The distribution of Sb atoms in δ-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.
中图分类号: (Defects and impurities: doping, implantation, distribution, concentration, etc.)