中国物理B ›› 1998, Vol. 7 ›› Issue (9): 695-702.doi: 10.1088/1004-423X/7/9/008

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THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL

贾全杰1, 郑文莉1, 王洲光1, 王俊1, 姜晓明1, 蒋最敏2, 裴成文2, 秦捷2, 胡冬枝2   

  1. (1)Institute of High Energy Physics, Academia Sinica, Beijing 100039, China; (2)State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
  • 收稿日期:1997-10-07 修回日期:1998-04-16 出版日期:1998-09-20 发布日期:1998-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China under the Grant No. 19674058.

THE DISTRIBUTION OF Sb ATOMS IN $\delta$-DOPED SILICON CRYSTAL

Jia Quan-jie (贾全杰)a, Zheng Wen-li (郑文莉)a, Wang Zhou-guang (王洲光)a, Wang Jun (王俊)a, Jiang Xiao-ming (姜晓明)a, Jiang Zui-min (蒋最敏)b, Pei Cheng-wen (裴成文)b, Qin Jie (秦捷)b, Hu Dong-zhi (胡冬枝)b   

  1. a Institute of High Energy Physics, Academia Sinica, Beijing 100039, China; b State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
  • Received:1997-10-07 Revised:1998-04-16 Online:1998-09-20 Published:1998-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China under the Grant No. 19674058.

摘要: The distribution of Sb atoms in δ-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.

Abstract: The distribution of Sb atoms in $\delta$-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.

中图分类号:  (Defects and impurities: doping, implantation, distribution, concentration, etc.)

  • 68.55.Ln
61.72.uf (Ge and Si) 68.55.A- (Nucleation and growth) 64.75.-g (Phase equilibria) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)