中国物理B ›› 2018, Vol. 27 ›› Issue (4): 46101-046101.doi: 10.1088/1674-1056/27/4/046101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Wettability of Si and Al-12Si alloy on Pd-implanted 6H-SiC

Ting-Ting Wang(汪婷婷), Gui-Wu Liu(刘桂武), Zhi-Kun Huang(黄志坤), Xiang-Zhao Zhang(张相召), Zi-Wei Xu(徐紫巍), Guan-Jun Qiao(乔冠军)   

  1. 1. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China;
    2. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
  • 收稿日期:2017-12-04 修回日期:2018-01-22 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Gui-Wu Liu, Guan-Jun Qiao E-mail:gwliu76@ujs.edu.cn;gjqiao@ujs.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51572112 and 51172177), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20151340), the Six Talent Peaks Project of Jiangsu Province, China (Grant Nos. 2014-XCL-002 and TD-XCL-004), the Innovation/Entrepreneurship Program of Jiangsu Province, China (Grant No.[2015]26), and the Qing Lan Project of Jiangsu Province, China (Grant No.[2016]15).

Wettability of Si and Al-12Si alloy on Pd-implanted 6H-SiC

Ting-Ting Wang(汪婷婷)1, Gui-Wu Liu(刘桂武)1, Zhi-Kun Huang(黄志坤)1, Xiang-Zhao Zhang(张相召)1, Zi-Wei Xu(徐紫巍)1, Guan-Jun Qiao(乔冠军)1,2   

  1. 1. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China;
    2. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
  • Received:2017-12-04 Revised:2018-01-22 Online:2018-04-05 Published:2018-04-05
  • Contact: Gui-Wu Liu, Guan-Jun Qiao E-mail:gwliu76@ujs.edu.cn;gjqiao@ujs.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51572112 and 51172177), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20151340), the Six Talent Peaks Project of Jiangsu Province, China (Grant Nos. 2014-XCL-002 and TD-XCL-004), the Innovation/Entrepreneurship Program of Jiangsu Province, China (Grant No.[2015]26), and the Qing Lan Project of Jiangsu Province, China (Grant No.[2016]15).

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摘要： SiC monocrystal substrates are implanted by Pd ions with different ion-beam energies and fluences, and the effects of Pd ion implantation on wettability of Si/SiC and Al-12Si/SiC systems are investigated by the sessile drop technique. The decreases of contact angles of the two systems are disclosed after the ion implantation, which can be attributed to the increase of surface energy (σSV) of SiC substrate derived from high concentration of defects induced by the ion-implantation and to the decrease of solid-liquid surface energy (σSL) resulting from the increasing interfacial interactions. This study can provide guidance in improving the wettability of metals on SiC and the electronic packaging process of SiC substrate.

关键词: ceramics, defects, surfaces, ion implantation, wettability

Abstract: SiC monocrystal substrates are implanted by Pd ions with different ion-beam energies and fluences, and the effects of Pd ion implantation on wettability of Si/SiC and Al-12Si/SiC systems are investigated by the sessile drop technique. The decreases of contact angles of the two systems are disclosed after the ion implantation, which can be attributed to the increase of surface energy (σSV) of SiC substrate derived from high concentration of defects induced by the ion-implantation and to the decrease of solid-liquid surface energy (σSL) resulting from the increasing interfacial interactions. This study can provide guidance in improving the wettability of metals on SiC and the electronic packaging process of SiC substrate.

Key words: ceramics, defects, surfaces, ion implantation, wettability

中图分类号:  (Doping and impurity implantation)

  • 61.72.U-
68.08.Bc (Wetting) 65.40.gp (Surface energy) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)