Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures

doi:10.1088/1674-1056/27/10/107901

中国物理B ›› 2018, Vol. 27 ›› Issue (10): 107901-107901.doi: 10.1088/1674-1056/27/10/107901

所属专题： TOPICAL REVIEW — Spin manipulation in solids

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Transport properties of doped Bi₂Se₃ and Bi₂Te₃ topological insulators and heterostructures

Zhen-Hua Wang(王振华), Xuan P A Gao(高翾), Zhi-Dong Zhang(张志东)

1 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;
2 Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, USA

收稿日期:2018-04-23 修回日期:2018-08-07 出版日期:2018-10-05 发布日期:2018-10-05
通讯作者: Zhen-Hua Wang E-mail:zhwang@imr.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51522104, 51590883, 51331006, and KJZD-EW-M05-3) and the National Science Foundation for its financial support under Award DMR-1151534.

Transport properties of doped Bi₂Se₃ and Bi₂Te₃ topological insulators and heterostructures

Zhen-Hua Wang(王振华)¹, Xuan P A Gao(高翾)², Zhi-Dong Zhang(张志东)¹

1 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;
2 Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, USA

Received:2018-04-23 Revised:2018-08-07 Online:2018-10-05 Published:2018-10-05
Contact: Zhen-Hua Wang E-mail:zhwang@imr.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51522104, 51590883, 51331006, and KJZD-EW-M05-3) and the National Science Foundation for its financial support under Award DMR-1151534.

摘要/Abstract

摘要：

In this review article, the recent experimental and theoretical research progress in Bi₂Se₃- and Bi₂Te₃-based topological insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. The electrical transport properties are discussed for a few different types of topological insulator heterostructures, such as heterostructures formed by Bi₂Se₃- and Bi₂Te₃-based binary/ternary/quaternary compounds and superconductors, nonmagnetic and magnetic metals, or semiconductors.

关键词: transport properties, interfaces, heterostructures, nanostructures, doping, magnetoresistance

Abstract:

Key words: transport properties, interfaces, heterostructures, nanostructures, doping, magnetoresistance

中图分类号: (Interfaces; heterostructures; nanostructures)

79.60.Jv

91.60.Tn (Transport properties) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 73.43.Qt (Magnetoresistance)

王振华, 高翾, 张志东. Transport properties of doped Bi₂Se₃ and Bi₂Te₃ topological insulators and heterostructures[J]. 中国物理B, 2018, 27(10): 107901-107901.

Zhen-Hua Wang(王振华), Xuan P A Gao(高翾), Zhi-Dong Zhang(张志东). Transport properties of doped Bi₂Se₃ and Bi₂Te₃ topological insulators and heterostructures[J]. Chin. Phys. B, 2018, 27(10): 107901-107901.

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Transport properties of doped Bi₂Se₃ and Bi₂Te₃ topological insulators and heterostructures

Transport properties of doped Bi₂Se₃ and Bi₂Te₃ topological insulators and heterostructures

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[5]	Li-Cai Hao(郝礼才), Zi-Ang Chen(陈子昂), Dong-Yang Liu(刘东阳), Wei-Kang Zhao(赵伟康),Ming Zhang(张鸣), Kun Tang(汤琨), Shun-Ming Zhu(朱顺明), Jian-Dong Ye(叶建东),Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林). Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films[J]. 中国物理B, 2023, 32(3): 38101-038101.
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