THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL

doi:10.1088/1004-423X/7/9/008

中国物理B ›› 1998, Vol. 7 ›› Issue (9): 695-702.doi: 10.1088/1004-423X/7/9/008

THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL

贾全杰¹, 郑文莉¹, 王洲光¹, 王俊¹, 姜晓明¹, 蒋最敏², 裴成文², 秦捷², 胡冬枝²

(1)Institute of High Energy Physics, Academia Sinica, Beijing 100039, China; (2)State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China

收稿日期:1997-10-07 修回日期:1998-04-16 出版日期:1998-09-20 发布日期:1998-09-20
基金资助:
Project supported by the National Natural Science Foundation of China under the Grant No. 19674058.

THE DISTRIBUTION OF Sb ATOMS IN $\delta$-DOPED SILICON CRYSTAL

Jia Quan-jie (贾全杰)^a, Zheng Wen-li (郑文莉)^a, Wang Zhou-guang (王洲光)^a, Wang Jun (王俊)^a, Jiang Xiao-ming (姜晓明)^a, Jiang Zui-min (蒋最敏)^b, Pei Cheng-wen (裴成文)^b, Qin Jie (秦捷)^b, Hu Dong-zhi (胡冬枝)^b

^a Institute of High Energy Physics, Academia Sinica, Beijing 100039, China; ^b State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China

Received:1997-10-07 Revised:1998-04-16 Online:1998-09-20 Published:1998-09-20
Supported by:
Project supported by the National Natural Science Foundation of China under the Grant No. 19674058.

摘要/Abstract

摘要： The distribution of Sb atoms in δ-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.

Abstract: The distribution of Sb atoms in $\delta$-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.

中图分类号: (Defects and impurities: doping, implantation, distribution, concentration, etc.)

68.55.Ln

61.72.uf (Ge and Si) 68.55.A- (Nucleation and growth) 64.75.-g (Phase equilibria) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)

贾全杰, 郑文莉, 王洲光, 王俊, 姜晓明, 蒋最敏, 裴成文, 秦捷, 胡冬枝. THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL[J]. 中国物理B, 1998, 7(9): 695-702.

Jia Quan-jie (贾全杰), Zheng Wen-li (郑文莉), Wang Zhou-guang (王洲光), Wang Jun (王俊), Jiang Xiao-ming (姜晓明), Jiang Zui-min (蒋最敏), Pei Cheng-wen (裴成文), Qin Jie (秦捷), Hu Dong-zhi (胡冬枝). THE DISTRIBUTION OF Sb ATOMS IN $\delta$-DOPED SILICON CRYSTAL[J]. Acta Physica Sinica (Overseas Edition), 1998, 7(9): 695-702.

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THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL

THE DISTRIBUTION OF Sb ATOMS IN $\delta$-DOPED SILICON CRYSTAL

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