中国物理B ›› 1998, Vol. 7 ›› Issue (9): 703-710.doi: 10.1088/1004-423X/7/9/009

• • 上一篇    

TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD

张向东1, 王俊忠1, 李伯臧1, 蒲富恪2   

  1. (1)Institute of Physics and Center for Condensed Matter Physics, Academia Sinica, Beijing 100080, China; (2)Institute of Physics and Center for Condensed Matter Physics, Academia Sinica, Beijing 100080, China; Department of Physics, Guangzhou Normal College, Guangzhou 510400, China
  • 收稿日期:1998-03-16 修回日期:1998-04-09 出版日期:1998-09-20 发布日期:1998-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China under the Grant No. 19774076.

TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD

Zhang Xiang-dong (张向东)a, Wang Jun-zhong (王俊忠)a, Li Bo-zang (李伯臧)a, Pu Fu-cho (蒲富恪)ab   

  1. a Institute of Physics and Center for Condensed Matter Physics, Academia Sinica, Beijing 100080, China; b Department of Physics, Guangzhou Normal College, Guangzhou 510400, China
  • Received:1998-03-16 Revised:1998-04-09 Online:1998-09-20 Published:1998-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China under the Grant No. 19774076.

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摘要： Based on the two-band model, we investigate the tunnel magnetoresistance(TMR) in ferromagnet/insulator (semiconductor)/ferromagnet(FM/I(S)/FM) tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. Our results show that TMR oscillates with the thickness of ferromagnetic layers owing to the quantum-size effect and can reach very large value under suitable conditions, which may in general not be reached in FM/I(S)/FM with infinitely thick ferromagnetic layer. Although the electric field causes the change of the oscillation period, phase and amplitude of the TMR, a large TMR is still obtained in some situations with the electric field. Furthermore, the electric field does not change the feature that TMR varies monotonously with the change of magnetization angle of the middle ferromagnetic layer.

Abstract: Based on the two-band model, we investigate the tunnel magnetoresistance(TMR) in ferromagnet/insulator (semiconductor)/ferromagnet(FM/I(S)/FM) tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. Our results show that TMR oscillates with the thickness of ferromagnetic layers owing to the quantum-size effect and can reach very large value under suitable conditions, which may in general not be reached in FM/I(S)/FM with infinitely thick ferromagnetic layer. Although the electric field causes the change of the oscillation period, phase and amplitude of the TMR, a large TMR is still obtained in some situations with the electric field. Furthermore, the electric field does not change the feature that TMR varies monotonously with the change of magnetization angle of the middle ferromagnetic layer.

中图分类号:  (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))

  • 75.70.Cn
75.70.Ak (Magnetic properties of monolayers and thin films) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 75.10.Lp (Band and itinerant models) 68.55.-a (Thin film structure and morphology) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)