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THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL
贾全杰, 郑文莉, 王洲光, 王俊, 姜晓明, 蒋最敏, 裴成文, 秦捷, 胡冬枝
1998 (9):
695-702.
doi: 10.1088/1004-423X/7/9/008
摘要
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The distribution of Sb atoms in δ-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.
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