中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87702-087702.doi: 10.1088/1674-1056/26/8/087702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Synergistic effects of electrical and optical excitations on TiO2 resistive device

Qi Mao(毛奇), Wei-Jian Lin(林伟坚), Ke-Jian Zhu(朱科建), Yang Meng(孟洋), Hong-Wu Zhao(赵宏武)   

  1. 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-03-24 修回日期:2017-04-18 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Qi Mao E-mail:maoqi2012@gmail.com
  • 基金资助:

    Project supported by the National Key Basic Research Project of China (Grant Nos. 2013CB921700 and 2016YFA0300600), the National Natural Science Foundation of China (Grant No. 11274375), and the Fund from Chinese Academy of Sciences (Grant No. KJCX2-YW-W24).

Synergistic effects of electrical and optical excitations on TiO2 resistive device

Qi Mao(毛奇)1,2, Wei-Jian Lin(林伟坚)1, Ke-Jian Zhu(朱科建)1, Yang Meng(孟洋)1,2, Hong-Wu Zhao(赵宏武)1,2   

  1. 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-03-24 Revised:2017-04-18 Online:2017-08-05 Published:2017-08-05
  • Contact: Qi Mao E-mail:maoqi2012@gmail.com
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the National Key Basic Research Project of China (Grant Nos. 2013CB921700 and 2016YFA0300600), the National Natural Science Foundation of China (Grant No. 11274375), and the Fund from Chinese Academy of Sciences (Grant No. KJCX2-YW-W24).

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摘要：

The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO/TiO2/ITO structure. Driven by the electrical and optical stimuli independently, the conductivity relaxation behaviors of the pristine resistive state (PRS) are observed and ascribed to the electron trapping and the oxygen transport processes. For a resistive switching (RS) device, the conductance change under optical illumination is about two orders of magnitude smaller than the conductance change corresponding to the variation of background current due to the emergence of a great number of oxygen vacancies in the RS device. With the illumination being off, the conductance slowly decays, which suggests that the oxygen diffusion process dominates the conductance relaxation. The difference in conductance relaxation between the bulk and edge devices indicates that the oxygen exchange plays a critical role in the relaxation process of conductivity. The synergistic effects of both electrical and optical excitations on the RS devices could be used for novel applications in integrated optoelectronic memory devices.

关键词: resistance switching, photoconductance, relaxation, oxygen vacancy

Abstract:

The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO/TiO2/ITO structure. Driven by the electrical and optical stimuli independently, the conductivity relaxation behaviors of the pristine resistive state (PRS) are observed and ascribed to the electron trapping and the oxygen transport processes. For a resistive switching (RS) device, the conductance change under optical illumination is about two orders of magnitude smaller than the conductance change corresponding to the variation of background current due to the emergence of a great number of oxygen vacancies in the RS device. With the illumination being off, the conductance slowly decays, which suggests that the oxygen diffusion process dominates the conductance relaxation. The difference in conductance relaxation between the bulk and edge devices indicates that the oxygen exchange plays a critical role in the relaxation process of conductivity. The synergistic effects of both electrical and optical excitations on the RS devices could be used for novel applications in integrated optoelectronic memory devices.

Key words: resistance switching, photoconductance, relaxation, oxygen vacancy

中图分类号:  (Switching phenomena)

  • 77.80.Fm
72.40.+w (Photoconduction and photovoltaic effects) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)