中国物理B ›› 2023, Vol. 32 ›› Issue (2): 20701-020701.doi: 10.1088/1674-1056/ac6947
Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction
Zeng Liu(刘增)1,2,†, Ling Du(都灵)3, Shao-Hui Zhang(张少辉)4,‡, Ang Bian(边昂)5, Jun-Peng Fang(方君鹏)6, Chen-Yang Xing(邢晨阳)7, Shan Li(李山)8, Jin-Cheng Tang(汤谨诚)8, Yu-Feng Guo(郭宇锋)1,2, and Wei-Hua Tang(唐为华)1,2,§
- 1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3 School of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China;
4 Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China;
5 Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;
6 School of Integrated Circuits, Tsinghua University, Beijing 100084, China;
7 Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
8 State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction
Zeng Liu(刘增)1,2,†, Ling Du(都灵)3, Shao-Hui Zhang(张少辉)4,‡, Ang Bian(边昂)5, Jun-Peng Fang(方君鹏)6, Chen-Yang Xing(邢晨阳)7, Shan Li(李山)8, Jin-Cheng Tang(汤谨诚)8, Yu-Feng Guo(郭宇锋)1,2, and Wei-Hua Tang(唐为华)1,2,§
- 1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3 School of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China;
4 Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China;
5 Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;
6 School of Integrated Circuits, Tsinghua University, Beijing 100084, China;
7 Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
8 State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
摘要： A flower-like SnO2-SnO/porous GaN (FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN, and SnO2-SnO composites with p-n junctions were loaded onto PGaN surface directly applied to H2S sensor. Meanwhile, the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150 ℃ under 50 ppm H2S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas sensor. The lowering working temperature and high sensitivity (23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO2-SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test stability. The simple design strategy of FSS/PGaN-based H2S sensor highlights its potential in various applications.
中图分类号: (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
- 07.07.Df