中国物理B ›› 2021, Vol. 30 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/ac0793

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Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure

Ruo-Han Li(李若晗)1, Wu-Xiong Fei(费武雄)2, Rui Tang(唐锐)2, Zhao-Xi Wu(吴照玺)3, Chao Duan(段超)3, Tao Zhang(张涛)1, Dan Zhu(朱丹)1, Wei-Hang Zhang(张苇杭)1, Sheng-Lei Zhao(赵胜雷)1,†, Jin-Cheng Zhang(张进成)1,‡, and Yue Hao(郝跃)1   

  1. 1 Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
    3 China Aerospace Components Engineering Center, Beijing 100094, China
  • 收稿日期:2021-03-02 修回日期:2021-05-13 接受日期:2021-06-03 出版日期:2021-07-16 发布日期:2021-08-02
  • 通讯作者: Sheng-Lei Zhao, Jin-Cheng Zhang E-mail:slzhao@xidian.edu.cn;jchzhang@xidian.edu.cn
  • 基金资助:
    Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122).

Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure

Ruo-Han Li(李若晗)1, Wu-Xiong Fei(费武雄)2, Rui Tang(唐锐)2, Zhao-Xi Wu(吴照玺)3, Chao Duan(段超)3, Tao Zhang(张涛)1, Dan Zhu(朱丹)1, Wei-Hang Zhang(张苇杭)1, Sheng-Lei Zhao(赵胜雷)1,†, Jin-Cheng Zhang(张进成)1,‡, and Yue Hao(郝跃)1   

  1. 1 Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
    3 China Aerospace Components Engineering Center, Beijing 100094, China
  • Received:2021-03-02 Revised:2021-05-13 Accepted:2021-06-03 Online:2021-07-16 Published:2021-08-02
  • Contact: Sheng-Lei Zhao, Jin-Cheng Zhang E-mail:slzhao@xidian.edu.cn;jchzhang@xidian.edu.cn
  • Supported by:
    Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122).

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摘要： The threshold voltage (Vth) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ1,p, polarization charge density σb, and equivalent unite capacitance Coc. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage Vth, and threshold voltage |Vth| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |Vth|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×1016 cm-3 at VGS = -12 V and VDS = -10 V.

关键词: p-channel GaN MOSFETs, enhancement mode (E-mode), threshold voltage

Abstract: The threshold voltage (Vth) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ1,p, polarization charge density σb, and equivalent unite capacitance Coc. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage Vth, and threshold voltage |Vth| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |Vth|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×1016 cm-3 at VGS = -12 V and VDS = -10 V.

Key words: p-channel GaN MOSFETs, enhancement mode (E-mode), threshold voltage

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)