中国物理B ›› 2021, Vol. 30 ›› Issue (4): 47305-.doi: 10.1088/1674-1056/abe9a8

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  • 收稿日期:2021-01-13 修回日期:2021-02-08 接受日期:2021-02-25 出版日期:2021-03-16 发布日期:2021-04-02

Quantization of the band at the surface of charge density wave material 2H-TaSe2

Man Li(李满)1,2,†, Nan Xu(徐楠)3,†, Jianfeng Zhang(张建丰)1,†, Rui Lou(娄睿)1, Ming Shi(史明)4, Lijun Li(黎丽君)5, Hechang Lei(雷和畅)1, Cedomir Petrovic6, Zhonghao Liu(刘中灏)7, Kai Liu(刘凯)1, Yaobo Huang(黄耀波)2,‡, and Shancai Wang(王善才)1,§   

  1. 1 Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
    2 Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China;
    3 Institute of Advanced Studies, Wuhan University, Wuhan 430072, China;
    4 Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen, Switzerland;
    5 Chongqing Technology and Busineee University, Chongqing 400067, China;
    6 Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA;
    7 State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics, SIMIT, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2021-01-13 Revised:2021-02-08 Accepted:2021-02-25 Online:2021-03-16 Published:2021-04-02
  • Contact: †These authors contributed equally. ‡Corresponding author. E-mail: huangyaobo@zjlab.org.cn §Corresponding author. E-mail: scw@ruc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11774421, 11774424, 11574394, 11774423, 11822412, and 11874047), the National Key R&D Program of China (Grant Nos. 2016YFA0401002, 2018YFA0307000, 2016YFA0300504, and 2018FYA0305800), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2042018kf-0030).

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Abstract: By using angle-resolved photoemission spectroscopy (ARPES) combined with the first-principles electronic structure calculations, we report the quantized states at the surface of a single crystal 2H-TaSe2. We have observed sub-bands of quantized states at the three-dimensional Brillouin zone center due to a highly dispersive band with light effective mass along kz direction. The quantized sub-bands shift upward towards EF while the bulk band at $\varGamma$ shifts downward with the decrease of temperature across charge density wave (CDW) formation. The band shifts could be intimately related to the CDW. While neither the two-dimensional Fermi-surface nesting nor purely strong electron-phonon coupling can explain the mechanism of CDW in 2H-TaSe2, our experiment may ignite the interest in understanding the CDW mechanism in this family.

Key words: angle-resolved photoemission spectroscopy, transition metal dichalcogenide, TaSe2

中图分类号:  (Electron states at surfaces and interfaces)

  • 73.20.-r
79.60.-i (Photoemission and photoelectron spectra) 73.20.Mf (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))