中国物理B ›› 2022, Vol. 31 ›› Issue (6): 66801-066801.doi: 10.1088/1674-1056/ac5396

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Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface

Wei-Min Jiang(姜伟民)1,†, Qiang Zhao(赵强)1,†, Jing-Zhuo Ling(凌靖卓)1, Ting-Na Shao(邵婷娜)1, Zi-Tao Zhang(张子涛)1, Ming-Rui Liu(刘明睿)2, Chun-Li Yao(姚春丽)1, Yu-Jie Qiao(乔宇杰)1, Mei-Hui Chen(陈美慧)1, Xing-Yu Chen(陈星宇)1, Rui-Fen Dou(窦瑞芬)1,‡, Chang-Min Xiong(熊昌民)1,§, and Jia-Cai Nie(聂家财)1,¶   

  1. 1 Department of Physics, Beijing Normal University, Beijing 100875, China;
    2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 收稿日期:2021-12-15 修回日期:2022-01-28 接受日期:2022-02-10 出版日期:2022-05-17 发布日期:2022-05-26
  • 通讯作者: Rui-Fen Dou, Chang-Min Xiong, Jia-Cai Nie E-mail:ruifendou@bnu.edu.cn;cmxiong@bnu.edu.cn;jcnie@bnu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grants Nos. 92065110, 11974048, and 12074334).

Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface

Wei-Min Jiang(姜伟民)1,†, Qiang Zhao(赵强)1,†, Jing-Zhuo Ling(凌靖卓)1, Ting-Na Shao(邵婷娜)1, Zi-Tao Zhang(张子涛)1, Ming-Rui Liu(刘明睿)2, Chun-Li Yao(姚春丽)1, Yu-Jie Qiao(乔宇杰)1, Mei-Hui Chen(陈美慧)1, Xing-Yu Chen(陈星宇)1, Rui-Fen Dou(窦瑞芬)1,‡, Chang-Min Xiong(熊昌民)1,§, and Jia-Cai Nie(聂家财)1,¶   

  1. 1 Department of Physics, Beijing Normal University, Beijing 100875, China;
    2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • Received:2021-12-15 Revised:2022-01-28 Accepted:2022-02-10 Online:2022-05-17 Published:2022-05-26
  • Contact: Rui-Fen Dou, Chang-Min Xiong, Jia-Cai Nie E-mail:ruifendou@bnu.edu.cn;cmxiong@bnu.edu.cn;jcnie@bnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grants Nos. 92065110, 11974048, and 12074334).

摘要: High mobility quasi two-dimensional electron gas (2DEG) found at the CaZrO3/SrTiO3 nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics. Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO3/SrTiO3 interface. Furthermore, the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage. Remarkably, the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage. The diffusion constant increases by a factor of ~ 19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from -50 V to 100 V. These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling, but also have great significance in developing various oxide functional devices.

关键词: CaZrO3/SrTiO3, 2DEG, Rashba spin-orbit coupling, gate voltage

Abstract: High mobility quasi two-dimensional electron gas (2DEG) found at the CaZrO3/SrTiO3 nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics. Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO3/SrTiO3 interface. Furthermore, the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage. Remarkably, the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage. The diffusion constant increases by a factor of ~ 19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from -50 V to 100 V. These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling, but also have great significance in developing various oxide functional devices.

Key words: CaZrO3/SrTiO3, 2DEG, Rashba spin-orbit coupling, gate voltage

中图分类号:  (Oxide surfaces)

  • 68.47.Gh
73.20.-r (Electron states at surfaces and interfaces) 81.15.Fg (Pulsed laser ablation deposition)