中国物理B ›› 2020, Vol. 29 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/ab96a4
• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇 下一篇
Sheng Hu(胡晟), Ling Yang(杨凌), Min-Han Mi(宓珉瀚), Bin Hou(侯斌), Sheng Liu(刘晟), Meng Zhang(张濛), Mei Wu(武玫), Qing Zhu(朱青), Sheng Wu(武盛), Yang Lu(卢阳), Jie-Jie Zhu(祝杰杰), Xiao-Wei Zhou(周小伟), Ling Lv(吕玲), Xiao-Hua Ma(马晓华), Yue Hao(郝跃)
Sheng Hu(胡晟)1, Ling Yang(杨凌)1, Min-Han Mi(宓珉瀚)2, Bin Hou(侯斌)2, Sheng Liu(刘晟)3, Meng Zhang(张濛)1, Mei Wu(武玫)2, Qing Zhu(朱青)1, Sheng Wu(武盛)2, Yang Lu(卢阳)2, Jie-Jie Zhu(祝杰杰)1, Xiao-Wei Zhou(周小伟)1, Ling Lv(吕玲)1, Xiao-Hua Ma(马晓华)2, Yue Hao(郝跃)2
摘要: The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional (2D)-three-dimensional (3D) channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure (DH:Si/C). Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure (SH:C). There are fast, medium, and slow trap states in DH:Si/C, while only medium trap states exist in SH:C. The time constant/trap density for medium trap state in SH:C heterostructure are (11 μs-17.7 μs)/(1.1×1013 cm-2·eV-1-3.9×1013 cm-2·eV-1) and (8.7 μs-14.1 μs)/(0.7×1013 cm-2·eV-1-1.9×1013 cm-2·eV-1) at 300 K and 500 K respectively. The time constant/trap density for fast, medium, and slow trap states in DH:Si/C heterostructure are (4.2 μs-7.7 μs)/(1.5×1013 cm-2·eV-1-3.2×1013 cm-2·eV-1), (6.8 μs-11.8 μs)/(0.8×1013 cm-2·eV-1-2.8×1013 cm-2·eV-1), (30.1 μs-151 μs)/(7.5×1012 cm-2·eV-1-7.8×1012 cm-2·eV-1) at 300 K and (3.5 μs-6.5 μs)/(0.9×1013 cm-2·eV-1-1.8×1013 cm-2·eV-1), (4.9 μs-9.4 μs)/(0.6×1013 cm-2·eV-1-1.7×1013 cm-2·eV-1), (20.6 μs-61.9 μs)/(3.2×1012 cm-2·eV-1-3.5×1012 cm-2·eV-1) at 500 K, respectively. The DH:Si/C structure can effectively reduce the density of medium trap states compared with SH:C structure.
中图分类号: (III-V semiconductors)