Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

doi:10.1088/1674-1056/28/3/037302

中国物理B ›› 2019, Vol. 28 ›› Issue (3): 37302-037302.doi: 10.1088/1674-1056/28/3/037302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

Mingchen Hou(侯明辰), Gang Xie(谢刚), Kuang Sheng(盛况)

College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China

收稿日期:2018-11-20 修回日期:2019-01-15 出版日期:2019-03-05 发布日期:2019-03-05
通讯作者: Gang Xie E-mail:xielyz@zju.edu.cn
基金资助:
Projects supported by the National Natural Science Foundation of China (Grant Nos. 51577169 and 51777187) and the National Key Research and Development Program of China (Grant No. 2017YFB0402804).

Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

Mingchen Hou(侯明辰), Gang Xie(谢刚), Kuang Sheng(盛况)

College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China

Received:2018-11-20 Revised:2019-01-15 Online:2019-03-05 Published:2019-03-05
Contact: Gang Xie E-mail:xielyz@zju.edu.cn
Supported by:
Projects supported by the National Natural Science Foundation of China (Grant Nos. 51577169 and 51777187) and the National Key Research and Development Program of China (Grant No. 2017YFB0402804).

摘要/Abstract

摘要：

The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface morphology and an intact contact interface are formed after laser annealing. None of the TiN alloy spikes are formed at the interface of the laser annealing sample. The experimental results show that the current transport mechanism through the ohmic contact after laser annealing is different from the conventional spike mechanism, and it is dominated by thermionic field emission.

关键词: gallium nitride, ohmic contacts, laser annealing, current transport mechanism

Abstract:

Key words: gallium nitride, ohmic contacts, laser annealing, current transport mechanism

中图分类号: (III-V semiconductors)

73.61.Ey

81.40.Rs (Electrical and magnetic properties related to treatment conditions) 68.37.Lp (Transmission electron microscopy (TEM)) 68.37.Ps (Atomic force microscopy (AFM))

侯明辰, 谢刚, 盛况. Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing[J]. 中国物理B, 2019, 28(3): 37302-037302.

Mingchen Hou(侯明辰), Gang Xie(谢刚), Kuang Sheng(盛况). Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing[J]. Chin. Phys. B, 2019, 28(3): 37302-037302.

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Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

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