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Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes[J]. 中国物理B, 2023, 32(3): 38502-038502. |
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Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage[J]. 中国物理B, 2023, 32(2): 27302-027302. |
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Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波). High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure[J]. 中国物理B, 2023, 32(1): 17305-017305. |
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Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306. |
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Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉). Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain[J]. 中国物理B, 2022, 31(8): 87101-087101. |
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Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |
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Qiliang Wang(王启亮), Tingting Wang(王婷婷), Taofei Pu(蒲涛飞), Shaoheng Cheng(成绍恒),Xiaobo Li(李小波), Liuan Li(李柳暗), and Jinping Ao(敖金平). Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode[J]. 中国物理B, 2022, 31(5): 57702-057702. |
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Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yixiao Qian(钱怡潇), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements[J]. 中国物理B, 2022, 31(4): 46104-046104. |
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Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平). Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor[J]. 中国物理B, 2022, 31(4): 47701-047701. |
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Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics[J]. 中国物理B, 2022, 31(4): 47302-047302. |
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Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). A 4H-SiC merged P-I-N Schottky with floating back-to-back diode[J]. 中国物理B, 2022, 31(2): 28503-028503. |
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Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田). Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction[J]. 中国物理B, 2022, 31(10): 108105-108105. |
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Xing-Hua Liu(刘兴华), Fang-Fang Ren(任芳芳), Jiandong Ye(叶建东), Shuxiao Wang(王书晓), Wei-Zong Xu(徐尉宗), Dong Zhou(周东), Mingbin Yu(余明斌), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Enhanced single photon emission in silicon carbide with Bull's eye cavities[J]. 中国物理B, 2022, 31(10): 104206-104206. |
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Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东). Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains[J]. 中国物理B, 2021, 30(9): 96803-096803. |
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Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Design and simulation of AlN-based vertical Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67305-067305. |