Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

doi:10.1088/1674-1056/26/4/047307

中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47307-047307.doi: 10.1088/1674-1056/26/4/047307

所属专题： TOPICAL REVIEW — ZnO-related materials and devices

• TOPICAL REVIEW—ZnO-related materials and devices • 上一篇下一篇

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Yong-Hui Zhang(张永晖), Zeng-Xia Mei(梅增霞), Hui-Li Liang(梁会力), Xiao-Long Du(杜小龙)

1 Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2016-09-14 修回日期:2017-01-24 出版日期:2017-04-05 发布日期:2017-04-05
通讯作者: Zeng-Xia Mei, Xiao-Long Du E-mail:zxmei@iphy.ac.cn;xldu@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grants Nos. 61306011, 11274366, 51272280, 11674405, and 11675280).

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Yong-Hui Zhang(张永晖)¹, Zeng-Xia Mei(梅增霞)¹, Hui-Li Liang(梁会力)¹, Xiao-Long Du(杜小龙)^1,2

1 Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

Received:2016-09-14 Revised:2017-01-24 Online:2017-04-05 Published:2017-04-05
Contact: Zeng-Xia Mei, Xiao-Long Du E-mail:zxmei@iphy.ac.cn;xldu@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grants Nos. 61306011, 11274366, 51272280, 11674405, and 11675280).

摘要/Abstract

摘要：

Flexible and transparent electronics enters into a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc. Zinc oxide (ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performances, together with low processing temperatures and good optical transparencies. In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and relevant materials. After a brief introduction, the main progress of the preparation of each component (substrate, electrodes, channel and dielectrics) is summarized and discussed. Then, the effect of mechanical bending on electrical performance is highlighted. Finally, we suggest the challenges and opportunities in future investigations.

关键词: zinc oxide, flexible electronics, transparent electronics, thin-film transistors

Abstract:

Key words: zinc oxide, flexible electronics, transparent electronics, thin-film transistors

中图分类号: (II-VI semiconductors)

73.61.Ga

85.30.Tv (Field effect devices)

张永晖, 梅增霞, 梁会力, 杜小龙. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials[J]. 中国物理B, 2017, 26(4): 47307-047307.

Yong-Hui Zhang(张永晖), Zeng-Xia Mei(梅增霞), Hui-Li Liang(梁会力), Xiao-Long Du(杜小龙). Review of flexible and transparent thin-film transistors based on zinc oxide and related materials[J]. Chin. Phys. B, 2017, 26(4): 47307-047307.

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Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

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