Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure

doi:10.1088/1674-1056/24/6/067306

中国物理B ›› 2015, Vol. 24 ›› Issue (6): 67306-067306.doi: 10.1088/1674-1056/24/6/067306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure

佟晓林^{a b}, 夏晓智^b, 李青侠^a

a Department of Electronics and Information Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
b School of Physics and Electronics, Henan University, Kaifeng 475001, China

收稿日期:2014-08-26 修回日期:2015-01-26 出版日期:2015-06-05 发布日期:2015-06-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 41176156).

Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure

Tong Xiao-Lin (佟晓林)^{a b}, Xia Xiao-Zhi (夏晓智)^b, Li Qing-Xia (李青侠)^a

a Department of Electronics and Information Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
b School of Physics and Electronics, Henan University, Kaifeng 475001, China

Received:2014-08-26 Revised:2015-01-26 Online:2015-06-05 Published:2015-06-05
Contact: Li Qing-Xia E-mail:qingxia_li@hust.edu.cn
About author:73.63.Bd; 85.30.De; 68.55.-a
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 41176156).

摘要/Abstract

摘要： The development of solution strategies for Zinc oxide (ZnO) quantum dots provides a pathway to utilizing ZnO nanocrystal thin films in optoelectronic devices. In this work, quasi-spherical ZnO quantum dots with a diameter of 5 nm are synthesized by using ethanol as a solvent. ZnO nanocrystal thin film is obtained by spin-coating ZnO quantum dots on a Au interdigital electrode (IDE)/Al₂O₃ substrate and annealing at different temperatures in order to yield the optimal photosensitive on/off ratio of ZnO. For further enhancing the responsivity, ion sputtering is utilized to deposit Pt nanoparticles on the surface of ZnO nanocrystal thin film, the responsivity of the ZnO/Pt bilayer nanostructure increases from 0.07 A/W to 54 A/W, showing that the metal/inorganic nanocrystal bilayer nanostructure can be used to improve the performance of optoelectronic devices. The excellent properties of ZnO/Pt bilayer nanostructure have important applications in future electronic and optoelectronic devices.

关键词: zinc oxide, nanocrystals, photoresponse, ion sputtering, plasma treatment

Abstract: The development of solution strategies for Zinc oxide (ZnO) quantum dots provides a pathway to utilizing ZnO nanocrystal thin films in optoelectronic devices. In this work, quasi-spherical ZnO quantum dots with a diameter of 5 nm are synthesized by using ethanol as a solvent. ZnO nanocrystal thin film is obtained by spin-coating ZnO quantum dots on a Au interdigital electrode (IDE)/Al₂O₃ substrate and annealing at different temperatures in order to yield the optimal photosensitive on/off ratio of ZnO. For further enhancing the responsivity, ion sputtering is utilized to deposit Pt nanoparticles on the surface of ZnO nanocrystal thin film, the responsivity of the ZnO/Pt bilayer nanostructure increases from 0.07 A/W to 54 A/W, showing that the metal/inorganic nanocrystal bilayer nanostructure can be used to improve the performance of optoelectronic devices. The excellent properties of ZnO/Pt bilayer nanostructure have important applications in future electronic and optoelectronic devices.

Key words: zinc oxide, nanocrystals, photoresponse, ion sputtering, plasma treatment

中图分类号: (Nanocrystalline materials)

73.63.Bd

85.30.De (Semiconductor-device characterization, design, and modeling) 68.55.-a (Thin film structure and morphology)

佟晓林, 夏晓智, 李青侠. Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure[J]. 中国物理B, 2015, 24(6): 67306-067306.

Tong Xiao-Lin (佟晓林), Xia Xiao-Zhi (夏晓智), Li Qing-Xia (李青侠). Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure[J]. Chin. Phys. B, 2015, 24(6): 67306-067306.

参考文献 49

[1]	Kim H, Gilmore C, Horwitz J, Pique A, Murata H, Kushto G, Schlaf R, Kafafi Z and Chrisey D 2000 Appl. Phys. Lett. 76 259
[2]	Ortel M, Pittner S and Wagner V 2013 J. Appl. Phys. 113 154502
[3]	Liu Y R, Su J, Lai P T and Yao R H 2014 Chin. Phys. B 23 068501
[4]	Luther J M, Gao J, Lloyd M T, Semonin O E, Beard M C and Nozik A J 2010 Adv. Mater. 22 3704
[5]	Bakin A, El Shaer A, Mofor A C, Al Suleiman M, Schlenker E and Waag A 2007 Phys. Status Solidi C 4 158
[6]	Jia Z N, Zhang X D, Liu Y, Wang Y F, Fan J, Liu C C and Zhao Y 2014 Chin. Phys. B 23 046106
[7]	Hongsith N, Wongrat E, Kerdcharoen T and Choopun S 2010 Sensor. Actuat. B-Chem. 144 67
[8]	Oh E, Choi H Y, Jung S H, Cho S, Kim J C, Lee K H, Kang S W, Kim J, Yun J Y and Jeong S H 2009 Sensor. Actuat. B-Chem. 141 239
[9]	Ren S T, Wang Q, Zhao F and Qu S L 2012 Chin. Phys. B 21 038104
[10]	Zhou J, Gu Y, Hu Y, Mai W, Yeh P H, Bao G, Sood A K, Polla D L and Wang Z L 2009 Appl. Phys. Lett. 94 191103
[11]	Bie Y Q, Liao Z M, Zhang H Z, Li G R, Ye Y, Zhou Y B, Xu J, Qin Z X, Dai L and Yu D P 2011 Adv. Mater. 23 649
[12]	Guo F, Yang B, Yuan Y, Xiao Z, Dong Q, Bi Y and Huang J 2012 Nat. Nanotechnol. 7 798
[13]	Zhang D and Brodie D 1994 Thin Solid Films 251 151
[14]	Sharma P, Sreenivas K and Rao K 2003 J. Appl. Phys. 93 3963
[15]	Studenikin S, Golego N and Cocivera M 2000 J. Appl. Phys. 87 2413
[16]	Zhang D 1995 J. Phys. D: Appl. Phys. 28 1273
[17]	Gu Z and Ban S L 2014 Acta Phys. Sin. 63 107301 (in Chinese)
[18]	Mao Y Z, Liu Y X, Li J, Li H, Pan X J and Xie E Q 2014 Acta Phys. Sin. 63 186801 (in Chinese)
[19]	Hou Q Y, Lu Z Y and Zhao C W 2014 Acta Phys. Sin. 63 197102 (in Chinese)
[20]	Tang X Y, Gao H, Pan S M, Sun J B, Yao X W and Zhang X T 2014 Acta Phys. Sin. 63 197302 (in Chinese)
[21]	Moazzami K, Murphy T, Phillips J, Cheung M C and Cartwright A 2006 Semicond. Sci. Technol. 21 717
[22]	Porter H, Cai A, Muth J and Narayan J 2005 Appl. Phys. Lett. 86 211918
[23]	Zhao X W, Gao X Y, Chen X M, Chen C and Zhao M K 2013 Chin. Phys. B 22 024202
[24]	Liu M and Kim H K 2004 Appl. Phys. Lett. 84 173
[25]	Wang Y B, Li G P, Xu N N and Pan X D 2013 Chin. Phys. B 22 036102
[26]	Zhao J, Dong J Y, Zhao X and Chen W 2014 Chin. Phys. Lett. 31 057307
[27]	Xu X Y, Ma X Y, Jin L and Yang D R 2012 Chin. Phys. Lett. 29 037301
[28]	Zhang Z, Yuan H, Zhou J, Liu D, Luo S, Miao Y, Gao Y, Wang J, Liu L and Song L 2006 J. Phys. Chem. B 110 8566
[29]	Fan H B, Zheng X L, Wu S C, Liu Z G and Yao H B 2012 Chin. Phys. B 21 038101
[30]	Yang P, Li P, Zhang L Q, Wang X L, Wang H, Song X F and Xie F W 2012 Chin. Phys. B 21 016803
[31]	Mollow E 1954 Photoconductivity Conference (John Wiley & Sons)
[32]	Yadav H K, Sreenivas K and Gupta V 2007 Appl. Phys. Lett. 90 172113
[33]	Yadav H K, Sreenivas K and Gupta V 2010 J. Appl. Phys. 107 044507
[34]	Wei T Y, Yeh P H, Lu S Y and Wang Z L 2009 J. Am. Chem. Soc. 131 17690
[35]	Kane W M 1966 J. Appl. Phys. 37 2085
[36]	Sherry L J, Jin R, Mirkin C A, Schatz G C and Duyne R P V 2006 Nano Lett. 6 2060
[37]	Liu K W, Liu B, Wang S J, Wei Z P, Wu T, Cong C X, Shen Z X, Sun X W and Sun H D 2009 J. Appl. Phys. 106 083110
[38]	Spanhel L and Anderson M A 1991 J. Am. Chem. Soc. 113 2826
[39]	Zhou H, Alves H, Hofmann D, Kriegseis W, Meyer B, Kaczmarczyk G and Hoffmann A 2002 Appl. Phys. Lett. 80 210
[40]	Kim K K, Kim H S, Hwang D K, Lim J H and Park S J 2003 Appl. Phys. Lett. 83 63
[41]	Xu X, Xu C and Hu J 2014 J. Appl. Phys. 116 103105
[42]	Liu T, Zhang X, Zhang J, Wang W, Feng L, Wu L, Li W, Zeng G and Li B 2013 Int. J. Photoenergy 2013 1
[43]	Sze S M and Ng K K 2006 Physics of Semiconductor Devices (Hoboken: John Wiley & Sons)
[44]	Prabhakar R R, Mathews N, Jinesh K B, Karthik K R G, Pramana S S, Varghese B, Sow C H and MhaiSalkar S 2012 J. Mater. Chem. 19 9678
[45]	Chen M, Hu L, Xu J, Liao M, Wu L and Fang X 2011 Small 7 2449
[46]	Liu H, Zhang Z, Hu L, Gao N, Sang L, Liao M, Ma R, Xu F and Fang X 2014 Adv. Opt. Mater. 2 771
[47]	Li D Z and Zhu R 2013 Chin. Phys. B 22 018502
[48]	Ren L, Tian T, Li Y, Huang J and Zhao X 2013 ACS Appl. Mater. Int. 5 5861
[49]	Zhu Y B, Hu W, Na J, He F, Zhou Y L and Chen C 2011 Chin. Phys. B 20 047301

Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure

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