Recent progress of the native defects and p-type doping of zinc oxide

doi:10.1088/1674-1056/26/4/047702

中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47702-047702.doi: 10.1088/1674-1056/26/4/047702

所属专题： TOPICAL REVIEW — ZnO-related materials and devices

• TOPICAL REVIEW—ZnO-related materials and devices • 上一篇下一篇

Recent progress of the native defects and p-type doping of zinc oxide

Kun Tang(汤琨), Shu-Lin Gu(顾书林), Jian-Dong Ye(叶建东), Shun-Ming Zhu(朱顺明), Rong Zhang(张荣), You-Dou Zheng(郑有炓)

School of Electronic Science & Engineering, Nanjing University, Nanjing 210023, China

收稿日期:2016-07-09 修回日期:2016-08-23 出版日期:2017-04-05 发布日期:2017-04-05
通讯作者: Shu-Lin Gu E-mail:slgu@nju.edu.cn
基金资助:
Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).

Recent progress of the native defects and p-type doping of zinc oxide

Kun Tang(汤琨), Shu-Lin Gu(顾书林), Jian-Dong Ye(叶建东), Shun-Ming Zhu(朱顺明), Rong Zhang(张荣), You-Dou Zheng(郑有炓)

School of Electronic Science & Engineering, Nanjing University, Nanjing 210023, China

Received:2016-07-09 Revised:2016-08-23 Online:2017-04-05 Published:2017-04-05
Contact: Shu-Lin Gu E-mail:slgu@nju.edu.cn
Supported by:
Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).

摘要/Abstract

摘要：

Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy. The unique property, i.e., high efficient light emission at ultraviolet band, makes ZnO potentially applied to the short-wavelength light emitting devices. However, efficient p-type doping is extremely hard for ZnO. Due to the wide band gap and low valence band energy, the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration. Native defects in ZnO can be divided into donor-like and acceptor-like ones. The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors. While the acceptor-like defect, zinc vacancy, is thought to be linked to complex shallow acceptors in group-VA doped ZnO. Therefore, the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction. Meanwhile, some novel ideas have been extensively proposed, like double-acceptor co-doping, acceptor doping in iso-valent element alloyed ZnO, etc., and have opened new directions for p-type doping. Some of the approaches have been positively judged. In this article, we thus review the recent (2011-now) research progress of the native defects and p-type doping approaches globally. We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.

关键词: zinc oxide, native defects, p-type doping, acceptor

Abstract:

Key words: zinc oxide, native defects, p-type doping, acceptor

中图分类号: (ZnO)

77.55.hf

61.72.-y (Defects and impurities in crystals; microstructure) 73.61.-r (Electrical properties of specific thin films) 74.72.Gh (Hole-doped)

汤琨, 顾书林, 叶建东, 朱顺明, 张荣, 郑有炓. Recent progress of the native defects and p-type doping of zinc oxide[J]. 中国物理B, 2017, 26(4): 47702-047702.

Kun Tang(汤琨), Shu-Lin Gu(顾书林), Jian-Dong Ye(叶建东), Shun-Ming Zhu(朱顺明), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Recent progress of the native defects and p-type doping of zinc oxide[J]. Chin. Phys. B, 2017, 26(4): 47702-047702.

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Recent progress of the native defects and p-type doping of zinc oxide

Recent progress of the native defects and p-type doping of zinc oxide

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