中国物理B ›› 2017, Vol. 26 ›› Issue (2): 27101-027101.doi: 10.1088/1674-1056/26/2/027101
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜)
Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜)
摘要: A novel voltage-withstand substrate with high-K (HK, k>3.9, k is the relative permittivity) dielectric and low specific on-resistance (Ron,sp) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N+-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (Nd) and reshape the electric field distribution. The highly doped N+-layer under the high-K dielectric acts as a low resistance path to reduce the Ron,sp. The new device with the high breakdown voltage (BV), the low Ron,sp, and the excellent figure of merit (FOM=BV2/Ron,sp) is obtained. The BV of HKLR LDMOS is 534 V, Ron,sp is 70.6 mΩ·cm2, and FOM is 4.039 MW·cm-2.
中图分类号: (Theories and models of many-electron systems)