中国物理B ›› 2017, Vol. 26 ›› Issue (12): 124210-124210.doi: 10.1088/1674-1056/26/12/124210
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
Feng Liang(梁锋), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同)
Feng Liang(梁锋)1,2, De-Gang Zhao(赵德刚)1,3, De-Sheng Jiang(江德生)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Ping Chen(陈平)1, Jing Yang(杨静)1, Wei Liu(刘炜)1, Shuang-Tao Liu(刘双韬)1, Yao Xing(邢瑶)1, Li-Qun Zhang(张立群)4, Wen-Jie Wang(王文杰)5, Mo Li(李沫)5, Yuan-Tao Zhang(张源涛)1, Guo-Tong Du(杜国同)1
摘要:
The upper waveguide (UWG) has direct influences on the optical and electrical characteristics of the violet laser diode (LD) by changing the optical field distribution or barrier of the electron blocking layer (EBL). In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power (OLP) under an injecting current of 120 mA or the threshold current (Ith) is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN (0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor (OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.
中图分类号: (Semiconductor lasers; laser diodes)