中国物理B ›› 2021, Vol. 30 ›› Issue (12): 124202-124202.doi: 10.1088/1674-1056/abf91a
Huan Wang(王欢)1,2, Jin-Chuan Zhang(张锦川)1,†, Feng-Min Cheng(程凤敏)1,3, Zeng-Hui Gu(顾增辉)1,2, Ning Zhuo(卓宁)1, Shen-Qiang Zhai(翟慎强)1, Feng-Qi Liu(刘峰奇)1,2,3,‡, Jun-Qi Liu(刘俊岐)1,2, Shu-Man Liu(刘舒曼)1,2, and Zhan-Guo Wang(王占国)1,2
Huan Wang(王欢)1,2, Jin-Chuan Zhang(张锦川)1,†, Feng-Min Cheng(程凤敏)1,3, Zeng-Hui Gu(顾增辉)1,2, Ning Zhuo(卓宁)1, Shen-Qiang Zhai(翟慎强)1, Feng-Qi Liu(刘峰奇)1,2,3,‡, Jun-Qi Liu(刘俊岐)1,2, Shu-Man Liu(刘舒曼)1,2, and Zhan-Guo Wang(王占国)1,2
摘要: We demonstrate a broad gain, continuous-wave (CW) operation InP-based quantum cascade laser (QCL) emitting at 11.8 μm with a modified dual-upper-state (DAU) and diagonal transition active region design. A 3 mm cavity length, 16.5 μm average ridge wide QCL with high-reflection (HR) coatings demonstrates a maximum peak power of 1.07 W at 283 K and CW output power of 60 mW at 293 K. The device also shows a broad and dual-frequency lasing spectrum in pulsed mode and a maximum average power of 258.6 mW at 283 K. Moreover, the full width at half maximum (FWHM) of the electroluminescent spectrum measured at subthreshold current is 2.37 μm, which indicates a broad gain spectrum of the materials. The tuning range of 1.38 μm is obtained by a grating-coupled external cavity (EC) Littrow configuration, which is beneficial for gas detection.
中图分类号: (Semiconductor lasers; laser diodes)