中国物理B ›› 2022, Vol. 31 ›› Issue (9): 94204-094204.doi: 10.1088/1674-1056/ac6946

• • 上一篇    下一篇

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

Qi-Qi Wang(王琦琦), Li Xu(徐莉)†, Jie Fan(范杰)‡, Hai-Zhu Wang(王海珠), and Xiao-Hui Ma(马晓辉)   

  1. State Key Laboratory of High-Power Laser Diodes, Changchun University of Science and Technology, Changchun 130022, China
  • 收稿日期:2022-02-28 修回日期:2022-04-17 接受日期:2022-04-22 出版日期:2022-08-19 发布日期:2022-08-24
  • 通讯作者: Li Xu, Jie Fan E-mail:361394566@qq.com;fanjie@cust.edu.cn
  • 基金资助:
    Project supported by the Science and Technology Development Plan of Jilin Province, China (Grant Nos. 20210201030GX and 20210201089GX).

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

Qi-Qi Wang(王琦琦), Li Xu(徐莉)†, Jie Fan(范杰)‡, Hai-Zhu Wang(王海珠), and Xiao-Hui Ma(马晓辉)   

  1. State Key Laboratory of High-Power Laser Diodes, Changchun University of Science and Technology, Changchun 130022, China
  • Received:2022-02-28 Revised:2022-04-17 Accepted:2022-04-22 Online:2022-08-19 Published:2022-08-24
  • Contact: Li Xu, Jie Fan E-mail:361394566@qq.com;fanjie@cust.edu.cn
  • Supported by:
    Project supported by the Science and Technology Development Plan of Jilin Province, China (Grant Nos. 20210201030GX and 20210201089GX).

RichHTML

0

PDF (PC)

39

赞

摘要： Broad area semiconductor laser (BAL) has poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. In this work, the distributed Bragg reflector laser diode with tapered grating (TDBR-LD) is studied. By changing the lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A. In contrast to the straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A, representing a 17% decline. The linewidth of TDBR-LD is 0.4 nm at 0.2 A, which is reduced by nearly 43% in comparison with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power value of approximate 470 mW.

关键词: tapered Bragg grating, lateral beam, semiconductor laser

Abstract: Broad area semiconductor laser (BAL) has poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. In this work, the distributed Bragg reflector laser diode with tapered grating (TDBR-LD) is studied. By changing the lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A. In contrast to the straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A, representing a 17% decline. The linewidth of TDBR-LD is 0.4 nm at 0.2 A, which is reduced by nearly 43% in comparison with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power value of approximate 470 mW.

Key words: tapered Bragg grating, lateral beam, semiconductor laser

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px