中国物理B ›› 2016, Vol. 25 ›› Issue (4): 48501-048501.doi: 10.1088/1674-1056/25/4/048501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

Ya-Bin Sun(孙亚宾), Jun Fu(付军), Yu-Dong Wang(王玉东), Wei Zhou(周卫), Wei Zhang(张伟), and Zhi-Hong Liu(刘志弘)   

  1. 1 College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
    2 Tsinghua National Laboratory for Information and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • 收稿日期:2015-11-04 修回日期:2015-12-29 出版日期:2016-04-05 发布日期:2016-04-05
  • 通讯作者: Jun Fu E-mail:fujun@tsinghua.edu.cn
  • 基金资助:
    Project supported partially by the Important National Science & Technology Specific Projects, China (Grant No. 2013ZX02503003).

Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

Ya-Bin Sun(孙亚宾)1, Jun Fu(付军)2, Yu-Dong Wang(王玉东)2, Wei Zhou(周卫)2, Wei Zhang(张伟)2, and Zhi-Hong Liu(刘志弘)2   

  1. 1 College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
    2 Tsinghua National Laboratory for Information and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • Received:2015-11-04 Revised:2015-12-29 Online:2016-04-05 Published:2016-04-05
  • Contact: Jun Fu E-mail:fujun@tsinghua.edu.cn
  • Supported by:
    Project supported partially by the Important National Science & Technology Specific Projects, China (Grant No. 2013ZX02503003).

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摘要： In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1×0.2×16 μm2 SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the extracted and modeled results. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.

关键词: temperature dependence, model parameter, SiGe HBT, HICUM

Abstract: In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1×0.2×16 μm2 SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the extracted and modeled results. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.

Key words: temperature dependence, model parameter, SiGe HBT, HICUM

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)