中国物理B ›› 2022, Vol. 31 ›› Issue (12): 128504-128504.doi: 10.1088/1674-1056/ac6333
Lijun Ni(倪丽君)1, Wenqiang Wang(王文强)1, Lichuan Jin(金立川)2, Jiandong Ye(叶建东)1, Hehe Gong(巩贺贺)1, Xiang Zhan(战翔)3, Zhendong Chen(陈振东)4, Longlong Zhang(张龙龙)1, Xingze Dai(代兴泽)1, Yao Li(黎遥)1, Rong Zhang(张荣)1, Yi Yang(杨燚)1, Huaiwu Zhang(张怀武)2, Ronghua Liu(刘荣华)3, Lina Chen(陈丽娜)5,†, and Yongbing Xu(徐永兵)1,6,‡
Lijun Ni(倪丽君)1, Wenqiang Wang(王文强)1, Lichuan Jin(金立川)2, Jiandong Ye(叶建东)1, Hehe Gong(巩贺贺)1, Xiang Zhan(战翔)3, Zhendong Chen(陈振东)4, Longlong Zhang(张龙龙)1, Xingze Dai(代兴泽)1, Yao Li(黎遥)1, Rong Zhang(张荣)1, Yi Yang(杨燚)1, Huaiwu Zhang(张怀武)2, Ronghua Liu(刘荣华)3, Lina Chen(陈丽娜)5,†, and Yongbing Xu(徐永兵)1,6,‡
摘要: We report the temperature dependence of the spin pumping effect for Y3Fe5O12 (YIG, 0.9 μm)/NiO (tNiO)/W (6 nm) (tNiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal Ic and sensitivity to the NiO layer thickness. We observe a dramatic decrease of Ic with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (tNiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the Ic of YIG/NiO/W exhibits a maximum near the TN of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.
中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)