Temperature-switching logic in MoS2 single transistors

doi:10.1088/1674-1056/aba9cf

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 97201-097201.doi: 10.1088/1674-1056/aba9cf

Temperature-switching logic in MoS₂ single transistors

Xiaozhang Chen(陈孝章), Lehua Gu(顾乐华), Lan Liu(刘岚), Huawei Chen(陈华威), Jingyu Li(栗敬俣), Chunsen Liu(刘春森), Peng Zhou(周鹏)

1 The State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
2 Department of Physics, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures(Ministry of Education), and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China;
3 School of Computer Science, Fudan University, Shanghai 200433, China

收稿日期:2020-06-17 修回日期:2020-07-07 接受日期:2020-07-28 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Chunsen Liu, Peng Zhou E-mail:chunsen_liu@fudan.edu.cn;pengzhou@fudan.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61925402, 61851402, and 61734003), Science and Technology Commission of Shanghai Municipality, China (Grant No. 19JC1416600), National Key Research and Development Program of China (Grant No. 2017YFB0405600), and Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program, China (Grant No. 18SG01).

Temperature-switching logic in MoS₂ single transistors

Xiaozhang Chen(陈孝章)¹, Lehua Gu(顾乐华)², Lan Liu(刘岚)¹, Huawei Chen(陈华威)¹, Jingyu Li(栗敬俣)¹, Chunsen Liu(刘春森)³, Peng Zhou(周鹏)¹

1 The State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;
2 Department of Physics, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures(Ministry of Education), and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China;
3 School of Computer Science, Fudan University, Shanghai 200433, China

Received:2020-06-17 Revised:2020-07-07 Accepted:2020-07-28 Online:2020-09-05 Published:2020-09-05
Contact: Chunsen Liu, Peng Zhou E-mail:chunsen_liu@fudan.edu.cn;pengzhou@fudan.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61925402, 61851402, and 61734003), Science and Technology Commission of Shanghai Municipality, China (Grant No. 19JC1416600), National Key Research and Development Program of China (Grant No. 2017YFB0405600), and Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program, China (Grant No. 18SG01).

摘要/Abstract

摘要：

Due to their unique characteristics, two-dimensional (2D) materials have drawn great attention as promising candidates for the next generation of integrated circuits, which generate a calculation unit with a new working mechanism, called a logic transistor. To figure out the application prospects of logic transistors, exploring the temperature dependence of logic characteristics is important. In this work, we explore the temperature effect on the electrical characteristic of a logic transistor, finding that changes in temperature cause transformation in the calculation: logical output converts from ‘AND’ at 10 K to ‘OR’ at 250 K. The transformation phenomenon of temperature regulation in logical output is caused by energy band which decreases with increasing temperature. In the experiment, the indirect band gap of MoS₂ shows an obvious decrease from 1.581 eV to 1.535 eV as the temperature increases from 10 K to 250 K. The change of threshold voltage with temperature is consistent with the energy band, which confirms the theoretical analysis. Therefore, as a promising material for future integrated circuits, the demonstrated characteristic of 2D transistors suggests possible application for future functional devices.

关键词: molybdenum disulfide (MoS₂), logic, temperature dependence, mobility

Abstract:

Key words: molybdenum disulfide (MoS₂), logic, temperature dependence, mobility

中图分类号: (Thermoelectric and thermomagnetic effects)

72.20.Pa

81.05.Zx (New materials: theory, design, and fabrication) 81.07.-b (Nanoscale materials and structures: fabrication and characterization)

陈孝章, 顾乐华, 刘岚, 陈华威, 栗敬俣, 刘春森, 周鹏. Temperature-switching logic in MoS₂ single transistors[J]. 中国物理B, 2020, 29(9): 97201-097201.

Xiaozhang Chen(陈孝章), Lehua Gu(顾乐华), Lan Liu(刘岚), Huawei Chen(陈华威), Jingyu Li(栗敬俣), Chunsen Liu(刘春森), Peng Zhou(周鹏). Temperature-switching logic in MoS₂ single transistors[J]. Chin. Phys. B, 2020, 29(9): 97201-097201.

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Temperature-switching logic in MoS₂ single transistors

Temperature-switching logic in MoS₂ single transistors

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