Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

doi:10.1088/1674-1056/25/3/036103

中国物理B ›› 2016, Vol. 25 ›› Issue (3): 36103-036103.doi: 10.1088/1674-1056/25/3/036103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

Pengcheng Huang(黄鹏程), Shuming Chen(陈书明), Jianjun Chen(陈建军)

1. College of Computer, National University of Defense Technology, Changsha 410073, China;
2. National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China

收稿日期:2015-07-07 修回日期:2015-10-07 出版日期:2016-03-05 发布日期:2016-03-05
通讯作者: Shuming Chen E-mail:smchen_cs@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376109, 61434007, and 61176030) and the Advanced Research Project of National University of Defense Technology, China (Grant No. 0100066314001).

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

Pengcheng Huang(黄鹏程)¹, Shuming Chen(陈书明)^1,2, Jianjun Chen(陈建军)¹

1. College of Computer, National University of Defense Technology, Changsha 410073, China;
2. National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China

Received:2015-07-07 Revised:2015-10-07 Online:2016-03-05 Published:2016-03-05
Contact: Shuming Chen E-mail:smchen_cs@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376109, 61434007, and 61176030) and the Advanced Research Project of National University of Defense Technology, China (Grant No. 0100066314001).

摘要/Abstract

摘要： In this paper, the effect of floating body effect (FBE) on a single event transient generation mechanism in fully depleted (FD) silicon-on-insulator (SOI) technology is investigated using three-dimensional technology computer-aided design (3D-TCAD) numerical simulation. The results indicate that the main SET generation mechanism is not carrier drift/diffusion but floating body effect (FBE) whether for positive or negative channel metal oxide semiconductor (PMOS or NMOS). Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking (IS) layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.

关键词: floating body effect, in-line stacking, silicon-on-insulator, source injection

Abstract: In this paper, the effect of floating body effect (FBE) on a single event transient generation mechanism in fully depleted (FD) silicon-on-insulator (SOI) technology is investigated using three-dimensional technology computer-aided design (3D-TCAD) numerical simulation. The results indicate that the main SET generation mechanism is not carrier drift/diffusion but floating body effect (FBE) whether for positive or negative channel metal oxide semiconductor (PMOS or NMOS). Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking (IS) layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.

Key words: floating body effect, in-line stacking, silicon-on-insulator, source injection

中图分类号: (Ion radiation effects)

61.80.Jh

85.30.Tv (Field effect devices) 94.05.Dd (Radiation processes)

黄鹏程, 陈书明, 陈建军. Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology[J]. 中国物理B, 2016, 25(3): 36103-036103.

Pengcheng Huang(黄鹏程), Shuming Chen(陈书明), Jianjun Chen(陈建军). Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology[J]. Chin. Phys. B, 2016, 25(3): 36103-036103.

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Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

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