2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

doi:10.1088/1674-1056/25/2/024204

中国物理B ›› 2016, Vol. 25 ›› Issue (2): 24204-024204.doi: 10.1088/1674-1056/25/2/024204

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

收稿日期:2015-07-05 修回日期:2015-09-10 出版日期:2016-02-05 发布日期:2016-02-05
通讯作者: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
基金资助:
Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB643903 and 2013CB932904), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), the National Natural Science Foundation of China (Grant Nos. 61435012, 61274013, 61306088, and 61290303), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB01010200).

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

Cheng-Ao Yang(杨成奥)^1,2, Yu Zhang(张宇)^1,2, Yong-Ping Liao(廖永平)^1,2, Jun-Liang Xing(邢军亮)^1,2, Si-Hang Wei(魏思航)^1,2, Li-Chun Zhang(张立春)^1,2, Ying-Qiang Xu(徐应强)^1,2, Hai-Qiao Ni(倪海桥)^1,2, Zhi-Chuan Niu(牛智川)^1,2

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

Received:2015-07-05 Revised:2015-09-10 Online:2016-02-05 Published:2016-02-05
Contact: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
Supported by:
Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB643903 and 2013CB932904), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), the National Natural Science Foundation of China (Grant Nos. 61435012, 61274013, 61306088, and 61290303), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB01010200).

摘要/Abstract

摘要： We report a type-I GaSb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20 ℃ with side mode suppression ratio (SMSR) as high as 24 dB. The maximum single mode continuous-wave output power is about 10 mW at room temperature (uncoated facet). A low threshold current density of 230 A/cm² is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

关键词: laterally coupled distributed feedback laser, LC-DFB, interference lithography, GaSb, second-order Bragg grating

Abstract: We report a type-I GaSb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20 ℃ with side mode suppression ratio (SMSR) as high as 24 dB. The maximum single mode continuous-wave output power is about 10 mW at room temperature (uncoated facet). A low threshold current density of 230 A/cm² is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

Key words: laterally coupled distributed feedback laser, LC-DFB, interference lithography, GaSb, second-order Bragg grating

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

78.55.Cr (III-V semiconductors) 78.67.De (Quantum wells) 42.60.Pk (Continuous operation)

杨成奥, 张宇, 廖永平, 邢军亮, 魏思航, 张立春, 徐应强, 倪海桥, 牛智川. 2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography[J]. 中国物理B, 2016, 25(2): 24204-024204.

Cheng-Ao Yang(杨成奥), Yu Zhang(张宇), Yong-Ping Liao(廖永平), Jun-Liang Xing(邢军亮), Si-Hang Wei(魏思航), Li-Chun Zhang(张立春), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). 2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography[J]. Chin. Phys. B, 2016, 25(2): 24204-024204.

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2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

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