›› 2014, Vol. 23 ›› Issue (9): 96801-096801.doi: 10.1088/1674-1056/23/9/096801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AlN interlayer by Rutherford backscattering/channeling

王欢a b, 姚淑德a   

  1. a State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China;
    b Chinese Academy of Engineering Physics, Mianyang 621900, China
  • 收稿日期:2013-11-17 修回日期:2014-02-23 出版日期:2014-09-15 发布日期:2014-09-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 91226202).

Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AlN interlayer by Rutherford backscattering/channeling

Wang Huan (王欢)a b, Yao Shu-De (姚淑德)a   

  1. a State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China;
    b Chinese Academy of Engineering Physics, Mianyang 621900, China
  • Received:2013-11-17 Revised:2014-02-23 Online:2014-09-15 Published:2014-09-15
  • Contact: Yao Shu-De E-mail:sdyao@pku.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 91226202).

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摘要： An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate with a thick (>1 μm) GaN intermediate layer. The Al composition was determined by Rutherford backscattering (RBS). Using the channeling scan around an off-normal [1213] axis in the (1010) plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AlN interlayer from 0.66% to 0.27%.

关键词: AlGaN, Rutherford backscattering/channeling, elastic strain

Abstract: An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate with a thick (>1 μm) GaN intermediate layer. The Al composition was determined by Rutherford backscattering (RBS). Using the channeling scan around an off-normal [1213] axis in the (1010) plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AlN interlayer from 0.66% to 0.27%.

Key words: AlGaN, Rutherford backscattering/channeling, elastic strain

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
73.61.Ey (III-V semiconductors) 82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis)