Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films

doi:10.1088/1674-1056/23/2/027702

中国物理B ›› 2014, Vol. 23 ›› Issue (2): 27702-027702.doi: 10.1088/1674-1056/23/2/027702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films

张飞^a, 林远彬^a, 吴昊^a, 苗青^a, 巩纪军^a, 陈继培^a, 吴素娟^a, 曾敏^a, 高兴森^a, 刘俊明^b

a Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China;
b Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

收稿日期:2013-03-26 修回日期:2013-05-06 出版日期:2013-12-12 发布日期:2013-12-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51072061, 51031004, and 51272078), the Program for Changjiang Scholars and Innovative Research Team in University, and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films

Zhang Fei (张飞)^a, Lin Yuan-Bin (林远彬)^a, Wu Hao (吴昊)^a, Miao Qing (苗青)^a, Gong Ji-Jun (巩纪军)^a, Chen Ji-Pei (陈继培)^a, Wu Su-Juan (吴素娟)^a, Zeng Min (曾敏)^a, Gao Xing-Sen (高兴森)^a, Liu Jun-Ming (刘俊明)^b

a Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China;
b Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

Received:2013-03-26 Revised:2013-05-06 Online:2013-12-12 Published:2013-12-12
Contact: Gao Xing-Sen, Liu Jun-Ming E-mail:xingsengao@scnu.edu.cn;liujm@nju.edu.cn
About author:77.84.-s; 77.80.-e; 73.50.-h; 72.20.-i
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51072061, 51031004, and 51272078), the Program for Changjiang Scholars and Innovative Research Team in University, and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

摘要/Abstract

摘要： In this work, the resistive switching behaviors of ferroelectrictric BaTiO₃/La_0.67Sr_0.33MnO₃ heterostructures deposited by pulsed laser deposition are investigated. The BaTiO₃ films show both well-established P–E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (V_max). At a V_max of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a V_max of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I–V curve fitting.

关键词: ferroelectrics, resistive switching, RRAM, pulsed laser deposition

Abstract: In this work, the resistive switching behaviors of ferroelectrictric BaTiO₃/La_0.67Sr_0.33MnO₃ heterostructures deposited by pulsed laser deposition are investigated. The BaTiO₃ films show both well-established P–E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (V_max). At a V_max of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a V_max of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I–V curve fitting.

Key words: ferroelectrics, resistive switching, RRAM, pulsed laser deposition

中图分类号: (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

77.84.-s

77.80.-e (Ferroelectricity and antiferroelectricity) 73.50.-h (Electronic transport phenomena in thin films) 72.20.-i (Conductivity phenomena in semiconductors and insulators)

张飞, 林远彬, 吴昊, 苗青, 巩纪军, 陈继培, 吴素娟, 曾敏, 高兴森, 刘俊明. Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films[J]. 中国物理B, 2014, 23(2): 27702-027702.

Zhang Fei (张飞), Lin Yuan-Bin (林远彬), Wu Hao (吴昊), Miao Qing (苗青), Gong Ji-Jun (巩纪军), Chen Ji-Pei (陈继培), Wu Su-Juan (吴素娟), Zeng Min (曾敏), Gao Xing-Sen (高兴森), Liu Jun-Ming (刘俊明). Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films[J]. Chin. Phys. B, 2014, 23(2): 27702-027702.

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Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films

Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films

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