Growth of high quality Sr2IrO4 epitaxial thin films onconductive substrates

doi:10.1088/1674-1056/28/7/078102

中国物理B ›› 2019, Vol. 28 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/28/7/078102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Growth of high quality Sr₂IrO₄ epitaxial thin films onconductive substrates

Hui Xu(徐珲), Zhangzhang Cui(崔璋璋), Xiaofang Zhai(翟晓芳), Yalin Lu(陆亚林)

1 Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China;
2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China;
3 Synergy Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
4 Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China

收稿日期:2019-02-18 修回日期:2019-04-01 出版日期:2019-07-05 发布日期:2019-07-05
通讯作者: Xiaofang Zhai, Yalin Lu E-mail:xfzhai@ustc.edu.cn;yllu@ustc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51627901 and 11574287), the National Key Research and Development Program of China (Grant No. 2016YFA0401004), and Hefei Science Center-Chinese Academy of Sciences (Grant No. 2016HSC-IU004). X. Z. acknowledges the support of the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2016389).

Growth of high quality Sr₂IrO₄ epitaxial thin films onconductive substrates

Hui Xu(徐珲)¹, Zhangzhang Cui(崔璋璋)^1,2, Xiaofang Zhai(翟晓芳)^1,3, Yalin Lu(陆亚林)^1,2,4

1 Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China;
2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China;
3 Synergy Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
4 Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China

Received:2019-02-18 Revised:2019-04-01 Online:2019-07-05 Published:2019-07-05
Contact: Xiaofang Zhai, Yalin Lu E-mail:xfzhai@ustc.edu.cn;yllu@ustc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51627901 and 11574287), the National Key Research and Development Program of China (Grant No. 2016YFA0401004), and Hefei Science Center-Chinese Academy of Sciences (Grant No. 2016HSC-IU004). X. Z. acknowledges the support of the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2016389).

摘要/Abstract

摘要：

Ruddlesden-Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin-orbit coupling of the heavy iridium atoms in them. A prominent example is the single layer Sr₂IrO₄, in which superconductivity has been proposed under electron doping. However, the synthesis of Sr₂IrO₄ high quality thin films has been a huge challenge due to the easy formation of impurities associated with different numbers of SrO layers. Thus techniques to optimize the growth of pure phase Sr₂IrO₄ are urgently required. Here we report the deposition of high quality Sr₂IrO₄ thin films on both insulating SrTiO₃ and conducting SrTiO₃:Nb substrates using pulsed laser deposition assisted with reflective high-energy electron diffraction. The optimal deposition temperature of Sr₂IrO₄ epitaxial films on SrTiO₃:Nb substrates is about 90 °C lower than that on SrTiO₃ substrates. The electrical transports of high quality Sr₂IrO₄ films are measured, which follow the three-dimensional Mott variable-range hopping model. The film magnetizations are measured, which show weak ferromagnetism below~240 K with a saturation magnetization of~0.2 μ_B/Ir at 5 K. This study provides applicable methods to prepare high quality 5d Sr₂IrO₄ epitaxial films, which could be extended to other Ruddlesden-Popper phases and potentially help the future study of exotic quantum phenomena in them.

关键词: substrates, pulsed laser deposition, iridates, conduction mechanism

Abstract:

Key words: substrates, pulsed laser deposition, iridates, conduction mechanism

中图分类号: (Methods of deposition of films and coatings; film growth and epitaxy)

81.15.-z

61.05.jh (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)) 71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect) 71.27.+a (Strongly correlated electron systems; heavy fermions)

徐珲, 崔璋璋, 翟晓芳, 陆亚林. Growth of high quality Sr₂IrO₄ epitaxial thin films onconductive substrates[J]. 中国物理B, 2019, 28(7): 78102-078102.

Hui Xu(徐珲), Zhangzhang Cui(崔璋璋), Xiaofang Zhai(翟晓芳), Yalin Lu(陆亚林). Growth of high quality Sr₂IrO₄ epitaxial thin films onconductive substrates[J]. Chin. Phys. B, 2019, 28(7): 78102-078102.

参考文献 17

[1]	Nishio K, Hwang H Y and Hikita Y 2016 APL Mater. 4 036102 doi: 10.1063/1.4943519
[2]	Lu C L, Quindeau A, Deniz H, Preziosi D, Hesse D and Alexe M 2014 Appl. Phys. Lett. 105 082407 doi: 10.1063/1.4894465
[3]	Zhang K L, Fan C C, Liu W L, Wu Y F, Lu X L, Liu Z T, Liu J S, Liu Z H and Shen D W 2018 Chin. Phys. B 27 088103 doi: 10.1088/1674-1056/27/8/088103
[4]	Nichols J, Terzic J, Bittle E G, Korneta O B, De Long L E, Brill J W, Cao G and Seo S S A 2013 Appl. Phys. Lett. 102 141908 doi: 10.1063/1.4801877
[5]	Liu X R, Cao Y W, Pal B, Middey S, Kareev M, Choi Y, Shafer P, Haskel D, Arenholz E and Chakhalian J 2017 Phys. Rev. Mater. 1 075004 doi: 10.1103/PhysRevMaterials.1.075004
[6]	Kim B J, Moon S J, Kim J Y, Park B G, Leem C S, Yu J, Noh T W, Kim C, Oh S J, Park J H, Durairaj V, Cao G and Rotenberg E 2008 Phys. Rev. Lett. 101 076402 doi: 10.1103/PhysRevLett.101.076402
[7]	Cao G, Bolivar J, Mccall S, Crow J E and Guertin R P 1998 Phys. Rev. B 57 R11039
[8]	Mitchell J F 2015 APL Mater. 3 062404 doi: 10.1063/1.4921953
[9]	Watanabe H, Shirakawa T and Yunoki S 2013 Phys. Rev. Lett. 110 027002 doi: 10.1103/PhysRevLett.110.027002
[10]	Chen B J, Yang N, Zhong N, Tang X D, Yang P X, Xiang P H and Duan C G 2017 Mater. Lett. 202 96 doi: 10.1016/j.matlet.2017.05.063
[11]	Meng D C, Zhai X F, Ma C, Huang H L, Yun Y, Huang Y, Fu Z P, Peng R R, Mao X Y, Chen X B, Brown G and Lu Y L 2015 Appl. Phys. Lett. 106 212906 doi: 10.1063/1.4921966
[12]	Yun Y, Zhai X F, Ma C, Huang H L, Meng D C, Cui Z Z, Wang J L, Fu Z P, Peng R R, Brown G J and Lu Y L 2015 Appl. Phys. Express 8 054001 doi: 10.7567/APEX.8.054001
[13]	Cui Z Z, Xu H, Yun Y, Guo J H, Chuang Y D, Huang H L, Meng D C, Wang J L, Fu Z P, Peng R R, Knize R J, Brown G J, Zhai X F and Lu Y L 2016 J. Appl. Phys. 120 084101 doi: 10.1063/1.4961392
[14]	Serrao C R, Liu J, Heron J T, Singh-Bhalla G, Yadav A, Suresha S J, Paull R J, Yi D, Chu J H, Trassin M, Vishwanath A, Arenholz E, Frontera C, Zelezny J, Jungwirth T, Marti X and Ramesh R 2013 Phys. Rev. B 87 085121 doi: 10.1103/PhysRevB.87.085121
[15]	Yun Y, Ma C, Zhai X F, Huang H L, Meng D C, Wang J L, Fu Z P, Peng R R, Brown G J and Lu Y L 2015 Appl. Phys. Lett. 107 011602 doi: 10.1063/1.4926499
[16]	Lee J H, Luo G, Tung I C, Chang S H, Luo Z, Malshe M, Gadre M, Bhattacharya A, Nakhmanson S M, Eastman J A, Hong H, Jellinek J, Morgan D, Fong D D and Freel J W 2014 Nat. Mater. 13 879 doi: 10.1038/nmat4039
[17]	Zheng H M, Zhan Q, Zavaliche F, Sherburne M, Straub F, Cruz M P, Chen L Q, Dahmen U and Ramesh R 2006 Nano Lett. 6 1401 doi: 10.1021/nl060401y

Growth of high quality Sr₂IrO₄ epitaxial thin films onconductive substrates

Growth of high quality Sr₂IrO₄ epitaxial thin films onconductive substrates

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 17

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Chun-Hua Chen(陈春华), Yong-Hui Zhou(周永惠), Ying Zhou(周颖), Yi-Fang Yuan(袁亦方), Chao An(安超), Xu-Liang Chen(陈绪亮), Zhao-Ming Tian(田召明), and Zhao-Rong Yang(杨昭荣). Pressure-induced anomalous insulating behavior in frustrated iridate La₃Ir₃O₁₁[J]. 中国物理B, 2021, 30(6): 67402-067402.
[2]	汪翔, 葛琛, 李格, 郭尔佳, 何萌, 王灿, 杨国桢, 金奎娟. A synaptic transistor with NdNiO₃[J]. 中国物理B, 2020, 29(9): 98101-098101.
[3]	黄伟其, 刘世荣, 彭鸿雁, 李鑫, 黄忠梅. Synthesis of new silicene structure and its energy band properties[J]. 中国物理B, 2020, 29(8): 84202-084202.
[4]	沈佳伟, 叶迅亨, 鲍志龙, 李璐, 杨波, 陶向明, 叶高翔. Growth and aggregation of Cu nanocrystals on ionic liquid surfaces[J]. 中国物理B, 2020, 29(6): 66801-066801.
[5]	卢晨曦, 余森江, 李领伟, 杨波, 陶向明, 叶高翔. A low-dimensional crystal growth model on an isotropic and quasi-free sustained substrate[J]. 中国物理B, 2020, 29(3): 38101-038101.
[6]	李琦, 张昭阳, 李海鸥, 孙堂友, 陈永和, 左园. Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate[J]. 中国物理B, 2019, 28(3): 37201-037201.
[7]	柴旭朝, 瞿博阳, 焦岳超, 刘萍, 马彦霞, 王凤歌, 李晓荃, 方向前, 韩平, 张荣. Effect of substrate type on Ni self-assembly process[J]. 中国物理B, 2019, 28(1): 16102-016102.
[8]	吕有明, 李超, 陈相和, 韩瞬, 曹培江, 贾芳, 曾玉祥, 刘新科, 许望颖, 柳文军, 朱德亮. Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition[J]. 中国物理B, 2019, 28(1): 18504-018504.
[9]	张凯莉, 樊聪聪, 刘万领, 吴宇峰, 卢祥乐, 刘正太, 刘吉山, 刘中灏, 沈大伟. Growth of high-quality perovskite (110)-SrIrO₃ thin films using reactive molecular beam epitaxy[J]. 中国物理B, 2018, 27(8): 88103-088103.
[10]	代立东, 胡海英, 李和平, 孙文清, 蒋建军. Influence of anisotropy on the electrical conductivity and diffusion coefficient of dry K-feldspar: Implications of the mechanism of conduction[J]. 中国物理B, 2018, 27(2): 28703-028703.
[11]	张晓飞, 陈杭, 余森江. Microstructure evolution of Cu atomic islands on liquid surfaces in the ambient atmosphere[J]. 中国物理B, 2015, 24(7): 76103-076103.
[12]	荣曦明, 陈骏, 李菁田, 庄军, 宁西京. Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model[J]. 中国物理B, 2015, 24(12): 128706-128706.
[13]	李璐, 闫培光, 王勇刚, 段利娜, 孙航, 司金海. Yb-doped passively mode-locked fiber laser with Bi₂Te₃-deposited[J]. 中国物理B, 2015, 24(12): 124204-124204.
[14]	张飞, 林远彬, 吴昊, 苗青, 巩纪军, 陈继培, 吴素娟, 曾敏, 高兴森, 刘俊明. Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films[J]. 中国物理B, 2014, 23(2): 27702-027702.
[15]	冉从军, 杨海龄, 王延恺, Hassan Farooq M, 周丽宫, 徐晓光, 姜勇. The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping[J]. 中国物理B, 2013, 22(6): 67503-067503.