中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77102-077102.doi: 10.1088/1674-1056/22/7/077102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

吕元杰a, 冯志红a, 顾国栋a, 敦少博a, 尹甲运a, 韩婷婷a, 盛百城a, 蔡树军a, 刘波a, 林兆军b   

  1. a Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    b School of Physics, Shandong University, Jinan 250100, China
  • 收稿日期:2012-12-05 修回日期:2013-02-25 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182) and the Foundation of Key Laboratory, China.

Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

Lü Yuan-Jie (吕元杰)a, Feng Zhi-Hong (冯志红)a, Gu Guo-Dong (顾国栋)a, Dun Shao-Bo (敦少博)a, Yin Jia-Yun (尹甲运)a, Han Ting-Ting (韩婷婷)a, Sheng Bai-Cheng (盛百城)a, Cai Shu-Jun (蔡树军)a, Liu Bo (刘波)a, Lin Zhao-Jun (林兆军)b   

  1. a Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    b School of Physics, Shandong University, Jinan 250100, China
  • Received:2012-12-05 Revised:2013-02-25 Online:2013-06-01 Published:2013-06-01
  • Contact: Feng Zhi-Hong E-mail:blueledviet@yahoo.com.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182) and the Foundation of Key Laboratory, China.

PDF (PC)

1513

赞

摘要： An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones gotten by using the capacitance-voltage (C-V) curve integration and the plot of dV/zd(lnI) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.

关键词: AlGaN/GaN heterostructure, Schottky diode, threshold voltage, series resistance

Abstract: An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones gotten by using the capacitance-voltage (C-V) curve integration and the plot of dV/zd(lnI) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.

Key words: AlGaN/GaN heterostructure, Schottky diode, threshold voltage, series resistance

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
74.78.Fk (Multilayers, superlattices, heterostructures) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))