Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET

doi:10.1088/1674-1056/22/2/028503

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 28503-028503.doi: 10.1088/1674-1056/22/2/028503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET

王斌, 张鹤鸣, 胡辉勇, 张玉明, 周春宇, 王冠宇, 李妤晨

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2012-04-11 修回日期:2012-09-11 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801); the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089); and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET

Wang Bin (王斌), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Zhang Yu-Ming (张玉明), Zhou Chun-Yu (周春宇), Wang Guan-Yu (王冠宇), Li Yu-Chen (李妤晨 )

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2012-04-11 Revised:2012-09-11 Online:2013-01-01 Published:2013-01-01
Contact: Wang Bin E-mail:wbin0316@126.com
Supported by:
Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801); the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089); and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

摘要/Abstract

摘要： The effect of substrate doping on the flatband and threshold voltages of strained-Si/SiGe p metal-oxide semiconductor field-effect transistor (pMOSFET) has been studied. By physically deriving the models of the flatband and threshold voltages, which have been validated by numerical simulation and experimental data, the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained. The proposed model can provide valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of strained-Si MOSFET.

关键词: strained-Si pMOSFET, flatband voltage, threshold voltage, doping

Abstract: The effect of substrate doping on the flatband and threshold voltages of strained-Si/SiGe p metal-oxide semiconductor field-effect transistor (pMOSFET) has been studied. By physically deriving the models of the flatband and threshold voltages, which have been validated by numerical simulation and experimental data, the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained. The proposed model can provide valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of strained-Si MOSFET.

Key words: strained-Si pMOSFET, flatband voltage, threshold voltage, doping

中图分类号: (Bipolar transistors)

85.30.Pq

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.-z (Semiconductor devices)

王斌, 张鹤鸣, 胡辉勇, 张玉明, 周春宇, 王冠宇, 李妤晨 . Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET[J]. 中国物理B, 2013, 22(2): 28503-028503.

Wang Bin (王斌), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Zhang Yu-Ming (张玉明), Zhou Chun-Yu (周春宇), Wang Guan-Yu (王冠宇), Li Yu-Chen (李妤晨 ). Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET[J]. Chin. Phys. B, 2013, 22(2): 28503-028503.

参考文献 17

[1]	Wu T F, Zhang H M, Wang G Y and Hu H Y 2011 Acta Phys. Sin. 60 027305 (in Chinese)
[2]	Song J J, Zhang H M, Hu H Y, Dai X Y and Xuan R X 2007 Chin. Phys. 16 3827
[3]	Li G J, Lai H K, Li C, Chen S Y and Yu J Z 2008 Chin. Phys. B 17 3479
[4]	Zhang Z F, Zhang H M, Hu H Y, Xuan R X and Song J J 2009 Acta Phys. Sin. 58 4648 (in Chinese)
[5]	Maiti C K 2007 International Workshop on Physics of Semiconductor Devices (IWPSD'07), December 16-20, 2007, Bombay, India, p. 55
[6]	Li B, Liu H X, Yuan B, Li J and Lu F M 2011 Acta Phys. Sin. 60 017202 (in Chinese)
[7]	Q S S, Zhang H M, Hu H Y, Wang G Y, Wang X Y, Qu J T and Xu X B 2011 Sci. Chin.: Phys. Mech. Astron. 54 2181
[8]	Flachowsky S, Wei A, Illgen R, Herrmann T, Hontschel J, Horstmann M and Klix W 2010 IEEE Trans. Electron Dev. 57 1343
[9]	Bera L K, Mathew S, Balasubramanian N, Braithwaite G, Currie M T and Singaporewala F 2004 Appl. Surf. Sci. 224 278
[10]	Liao J H, Canonico M, Robinson M and Schroder D 2006 ECS Trans. 3 1211
[11]	Zainuddin A N M and Haque A 2007 Semicond. Sci. Technol. 22 125
[12]	Wei J Y, Maikap S, Lee M H, Lee C C and Liu C W 2006 Solid State Electron. 50 109
[13]	Bindu B, DasGupta N and DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
[14]	Li L, Liu H X and Yang Z N 2012 Acta Phys. Sin. 61 166101 (in Chinese)
[15]	Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X and Shu B 2010 Chin. Phys. B 19 117309
[16]	Zhang W M and Fossum J G 2005 IEEE Trans. Electron. Dev. 52 263
[17]	Fossum J G and Zhang W M 2003 IEEE Trans. Electron. Dev. 50 1042

Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET

Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET

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