Surface electron doping induced double gap opening in Td-WTe2

doi:10.1088/1674-1056/ac632e

中国物理B ›› 2022, Vol. 31 ›› Issue (6): 66802-066802.doi: 10.1088/1674-1056/ac632e

Surface electron doping induced double gap opening in T_d-WTe₂

Qi-Yuan Li(李启远)^1,2, Yang-Yang Lv(吕洋洋)^1,3, Yong-Jie Xu(徐永杰)^1,2, Li Zhu(朱立)^1,2, Wei-Min Zhao(赵伟民)^1,2, Yanbin Chen(陈延彬)^1,2,4, and Shao-Chun Li(李绍春)^1,2,4,5,†

1 National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;
2 School of Physics, Nanjing University, Nanjing 210093, China;
3 Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China;
4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
5 Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China

收稿日期:2022-01-18 修回日期:2022-03-20 接受日期:2022-04-01 出版日期:2022-05-17 发布日期:2022-05-26
通讯作者: Shao-Chun Li E-mail:scli@nju.edu.cn
基金资助:
We thank Dr. Ping Zhang and Dr. Fawei Zheng for fruitful discussions. This work was financially supported by the National Natural Science Foundation of China (Grants Nos. 11790311, 92165205, 51902152, 11874210, and 11774149) and the National Key R&D Program of China (Grants No. 2021YFA1400403).

Surface electron doping induced double gap opening in T_d-WTe₂

1 National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;
2 School of Physics, Nanjing University, Nanjing 210093, China;
3 Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China;
4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
5 Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China

Received:2022-01-18 Revised:2022-03-20 Accepted:2022-04-01 Online:2022-05-17 Published:2022-05-26
Contact: Shao-Chun Li E-mail:scli@nju.edu.cn
Supported by:
We thank Dr. Ping Zhang and Dr. Fawei Zheng for fruitful discussions. This work was financially supported by the National Natural Science Foundation of China (Grants Nos. 11790311, 92165205, 51902152, 11874210, and 11774149) and the National Key R&D Program of China (Grants No. 2021YFA1400403).

摘要/Abstract

摘要： By using scanning tunneling microscopy, we investigated the electronic evolution of T_d-WTe₂ via in-situ surface alkali K atoms deposition. The T_d-WTe₂ surface is electron doped upon K deposition, and as the K coverage increases, two gaps are sequentially opened near Fermi energy, which probably indicates that two phase transitions concomitantly occur during electron doping. The two gaps both show a dome-like dependence on the K coverage. While the bigger gap shows no prominent dependence on the magnetic field, the smaller one can be well suppressed and thus possibly corresponds to the superconducting transition. This work indicates that T_d-WTe₂ exhibits rich quantum states closely related to the carrier concentration.

关键词: scanning tunneling microscopy, T_d-WTe₂, surface electron doping, superconductivity transition

Abstract: By using scanning tunneling microscopy, we investigated the electronic evolution of T_d-WTe₂ via in-situ surface alkali K atoms deposition. The T_d-WTe₂ surface is electron doped upon K deposition, and as the K coverage increases, two gaps are sequentially opened near Fermi energy, which probably indicates that two phase transitions concomitantly occur during electron doping. The two gaps both show a dome-like dependence on the K coverage. While the bigger gap shows no prominent dependence on the magnetic field, the smaller one can be well suppressed and thus possibly corresponds to the superconducting transition. This work indicates that T_d-WTe₂ exhibits rich quantum states closely related to the carrier concentration.

Key words: scanning tunneling microscopy, T_d-WTe₂, surface electron doping, superconductivity transition

中图分类号: (Scanning tunneling microscopy (including chemistry induced with STM))

68.37.Ef

74.78.-w (Superconducting films and low-dimensional structures) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

Qi-Yuan Li(李启远), Yang-Yang Lv(吕洋洋), Yong-Jie Xu(徐永杰), Li Zhu(朱立), Wei-Min Zhao(赵伟民), Yanbin Chen(陈延彬), and Shao-Chun Li(李绍春). Surface electron doping induced double gap opening in T_d-WTe₂[J]. 中国物理B, 2022, 31(6): 66802-066802.

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Surface electron doping induced double gap opening in T_d-WTe₂

Surface electron doping induced double gap opening in T_d-WTe₂

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