中国物理B ›› 2023, Vol. 32 ›› Issue (3): 38101-038101.doi: 10.1088/1674-1056/ac7f8a

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Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films

Li-Cai Hao(郝礼才)1, Zi-Ang Chen(陈子昂)2,3, Dong-Yang Liu(刘东阳)2,3, Wei-Kang Zhao(赵伟康)2,3, Ming Zhang(张鸣)2,3, Kun Tang(汤琨)2,3,†, Shun-Ming Zhu(朱顺明)2,3, Jian-Dong Ye(叶建东)2,3, Rong Zhang(张荣)2,3, You-Dou Zheng(郑有炓)2,3, and Shu-Lin Gu(顾书林)2,3,‡   

  1. 1 School of Integrated Circuits, Anhui University, Hefei 230039, China;
    2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    3 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2022-03-11 修回日期:2022-06-10 接受日期:2022-07-08 出版日期:2023-02-14 发布日期:2023-02-21
  • 通讯作者: Kun Tang, Shu-Lin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFB0406502, 2017YFF0210800, and 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61775203, 61574075, 61974059, 61674077, 61774081, and 91850112), the State Key Research and Development Project of Jiangsu, China (Grant No. BE2018115), State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices (Grant No. 2017KF001), and Anhui University Natural Science Research Project (Grant No. KJ2021A0037).

Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films

Li-Cai Hao(郝礼才)1, Zi-Ang Chen(陈子昂)2,3, Dong-Yang Liu(刘东阳)2,3, Wei-Kang Zhao(赵伟康)2,3, Ming Zhang(张鸣)2,3, Kun Tang(汤琨)2,3,†, Shun-Ming Zhu(朱顺明)2,3, Jian-Dong Ye(叶建东)2,3, Rong Zhang(张荣)2,3, You-Dou Zheng(郑有炓)2,3, and Shu-Lin Gu(顾书林)2,3,‡   

  1. 1 School of Integrated Circuits, Anhui University, Hefei 230039, China;
    2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    3 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China
  • Received:2022-03-11 Revised:2022-06-10 Accepted:2022-07-08 Online:2023-02-14 Published:2023-02-21
  • Contact: Kun Tang, Shu-Lin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFB0406502, 2017YFF0210800, and 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61775203, 61574075, 61974059, 61674077, 61774081, and 91850112), the State Key Research and Development Project of Jiangsu, China (Grant No. BE2018115), State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices (Grant No. 2017KF001), and Anhui University Natural Science Research Project (Grant No. KJ2021A0037).

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摘要： This work investigates the suppression and compensation effect of oxygen on the behaviors and characteristics of heavily boron-doped microwave plasma chemical vapor deposition (MPCVD) diamond films. The suppression effect of oxygen on boron incorporation is observed by an improvement in crystal quality when oxygen is added during the diamond doping process. A relatively low hole concentration is expected and verified by Hall effect measurements due to the compensation effect of oxygen as a deep donor in diamond. A low acceptor concentration, high compensation donor concentration and relatively larger acceptor ionization energy are then induced by the incorporation of oxygen; however, a heavily boron-doped diamond film with high crystal quality can also be expected. The formation of an oxygen-boron complex structure instead of oxygen substitution, as indicated by the results of x-ray photoelectron spectroscopy, is suggested to be more responsible for the observed enhanced compensation effect due to its predicted low formation energy. Meanwhile, density functional theory calculations show that the boron-oxygen complex structure is easily formed in diamond with a formation energy of -0.83 eV. This work provides a comprehensive understanding of oxygen compensation in heavily boron-doped diamond.

关键词: diamond, boron-oxygen co-doping, incorporation efficiency, ionization energy, compensation, boron-oxygen complex

Abstract: This work investigates the suppression and compensation effect of oxygen on the behaviors and characteristics of heavily boron-doped microwave plasma chemical vapor deposition (MPCVD) diamond films. The suppression effect of oxygen on boron incorporation is observed by an improvement in crystal quality when oxygen is added during the diamond doping process. A relatively low hole concentration is expected and verified by Hall effect measurements due to the compensation effect of oxygen as a deep donor in diamond. A low acceptor concentration, high compensation donor concentration and relatively larger acceptor ionization energy are then induced by the incorporation of oxygen; however, a heavily boron-doped diamond film with high crystal quality can also be expected. The formation of an oxygen-boron complex structure instead of oxygen substitution, as indicated by the results of x-ray photoelectron spectroscopy, is suggested to be more responsible for the observed enhanced compensation effect due to its predicted low formation energy. Meanwhile, density functional theory calculations show that the boron-oxygen complex structure is easily formed in diamond with a formation energy of -0.83 eV. This work provides a comprehensive understanding of oxygen compensation in heavily boron-doped diamond.

Key words: diamond, boron-oxygen co-doping, incorporation efficiency, ionization energy, compensation, boron-oxygen complex

中图分类号:  (Diamond)

  • 81.05.ug
81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.20.-n (Methods of materials synthesis and materials processing)