中国物理B ›› 2013, Vol. 22 ›› Issue (11): 116105-116105.doi: 10.1088/1674-1056/22/11/116105

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Micro-track structure analysis for 100 MeV Si ions in CR-39 by using atomic force microscopy

方美华a, 魏志勇a, 张紫霞a, 朱立a, 府宇a, 石苗a, 黎光武b, 郭刚b   

  1. a Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
    b China Institute of Atomic Energy, Beijing 102413, China
  • 收稿日期:2013-01-15 修回日期:2013-05-05 出版日期:2013-09-28 发布日期:2013-09-28

Micro-track structure analysis for 100 MeV Si ions in CR-39 by using atomic force microscopy

Fang Mei-Hua (方美华)a, Wei Zhi-Yong (魏志勇)a, Zhang Zi-Xia (张紫霞)a, Zhu Li (朱立)a, Fu Yu (府宇)a, Shi Miao (石苗)a, Li Guang-Wu (黎光武)b, Guo Gang (郭刚)b   

  1. a Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
    b China Institute of Atomic Energy, Beijing 102413, China
  • Received:2013-01-15 Revised:2013-05-05 Online:2013-09-28 Published:2013-09-28
  • Contact: Wei Zhi-Yong E-mail:wzy_msc@nuaa.edu.cn

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摘要： To analyze the micro-track structure of heavy ions in a polymer material, parameters including bulk etch rate, track etch rate, etch rate ratio, and track core size were measured. The pieces of CR-39 were exposed to 100 MeV Si ions with normal incidence and were etched in 6.25N NaOH solution at 70 ℃. Bulk etch rate was read out by a profilemeter after several hours of etching. The other parameters were obtained by using an atomic force microscope (AFM) after a short time of etching. We have measured the second etch pits and minute etch pits to obtain the track growth curve and three dimension track structures to track the core size and etch rate measurements. The local dose of the track core was calculated by the δ-ray theory. In our study, we figure out that the bulk etch rate Vb=(1.58±0.022) μm/h, the track etch rate Vt=(2.90±0.529) μ/h, the etch rate ratio V=1.84±0.031, and the track core radii r≈4.65 nm. In the meantime, we find that the micro-track development violates the traditional track-growth model. For this reason, a scenario is carried out to provide an explanation.

关键词: micro-track structure, bulk etch rate, track etch rate, track core size

Abstract: To analyze the micro-track structure of heavy ions in a polymer material, parameters including bulk etch rate, track etch rate, etch rate ratio, and track core size were measured. The pieces of CR-39 were exposed to 100 MeV Si ions with normal incidence and were etched in 6.25N NaOH solution at 70 ℃. Bulk etch rate was read out by a profilemeter after several hours of etching. The other parameters were obtained by using an atomic force microscope (AFM) after a short time of etching. We have measured the second etch pits and minute etch pits to obtain the track growth curve and three dimension track structures to track the core size and etch rate measurements. The local dose of the track core was calculated by the δ-ray theory. In our study, we figure out that the bulk etch rate Vb=(1.58±0.022) μm/h, the track etch rate Vt=(2.90±0.529) μ/h, the etch rate ratio V=1.84±0.031, and the track core radii r≈4.65 nm. In the meantime, we find that the micro-track development violates the traditional track-growth model. For this reason, a scenario is carried out to provide an explanation.

Key words: micro-track structure, bulk etch rate, track etch rate, track core size

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
07.79.Lh (Atomic force microscopes) 61.82.Pv (Polymers, organic compounds)