中国物理B ›› 2010, Vol. 19 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/19/5/057304

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Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

杜刚, 刘晓彦, 夏志良, 杨竞峰, 韩汝琦   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2009-04-15 修回日期:2009-11-18 出版日期:2010-05-15 发布日期:2010-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.~60606013), and the National Basic Research Program of China (Grant No.~2006CB302705).

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Du Gang(杜刚)†, Liu Xiao-Yan(刘晓彦), Xia Zhi-Liang(夏志良), Yang Jing-Feng(杨竞峰), and Han Ru-Qi(韩汝琦)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2009-04-15 Revised:2009-11-18 Online:2010-05-15 Published:2010-05-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.~60606013), and the National Basic Research Program of China (Grant No.~2006CB302705).

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摘要： Interface roughness strongly influences the performance of germanium metal--organic--semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50~nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The $82\%$ and $96\%$ drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.

Abstract: Interface roughness strongly influences the performance of germanium metal--organic--semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50~nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The $82\%$ and $96\%$ drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.

Key words: carrier transport, interface scattering, germanium MOSFETs, Monte Carlo

中图分类号:  (Field effect devices)

  • 85.30.Tv
68.35.Ct (Interface structure and roughness) 73.50.Dn (Low-field transport and mobility; piezoresistance) 85.30.De (Semiconductor-device characterization, design, and modeling)