中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127204-127204.doi: 10.1088/1674-1056/19/12/127204

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The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing

黄征, 武莉莉, 黎兵, 郝霞, 贺剑雄, 冯良桓, 李卫, 张静全, 蔡亚平   

  1. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
  • 收稿日期:2010-01-05 修回日期:2010-06-10 出版日期:2010-12-15 发布日期:2010-12-15
  • 基金资助:
    Project supported by the National High Technology Research and Development Program (863 Program) of China (Grant No. 2006AA05Z418).

The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing

Huang Zheng(黄征), Wu Li-Li(武莉莉)†, Li Bing(黎兵), Hao Xia(郝霞), He Jian-Xiong(贺剑雄), Feng Liang-Huan(冯良桓), Li Wei(李卫), Zhang Jing-Quan(张静全), and Cai Yap-Ping(蔡亚平)   

  1. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
  • Received:2010-01-05 Revised:2010-06-10 Online:2010-12-15 Published:2010-12-15
  • Supported by:
    Project supported by the National High Technology Research and Development Program (863 Program) of China (Grant No. 2006AA05Z418).

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摘要： In order to fabricate AlSb polycrystalline thin films without post annealing, this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate. It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures. It finds that the films prepared at a substrate temperature of 450 oC exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant (0.61355 nm). The ln(σdark) ～1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 oC without an annealing. The transmittance and reflectance spectra show that the film deposited at 450 oC has an optical band gap of 1.6 eV. These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing.

Abstract: In order to fabricate AlSb polycrystalline thin films without post annealing, this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate. It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures. It finds that the films prepared at a substrate temperature of 450 $^\circ$C exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant (0.61355 nm). The ln($\sigma$dark) ～1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 $^\circ$C without an annealing. The transmittance and reflectance spectra show that the film deposited at 450 $^\circ$C has an optical band gap of 1.6 eV. These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing.

Key words: AlSb thin films, magnetron sputtering, solar cells

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
71.20.Nr (Semiconductor compounds) 73.61.Ey (III-V semiconductors) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.66.Fd (III-V semiconductors) 81.15.Cd (Deposition by sputtering)