Investigation of the lateral spread of erbium ions implanted in silicon crystal

doi:10.1088/1674-1056/19/11/113403

中国物理B ›› 2010, Vol. 19 ›› Issue (11): 113403-113501.doi: 10.1088/1674-1056/19/11/113403

Investigation of the lateral spread of erbium ions implanted in silicon crystal

梁毅¹, 陈明², 张少梅², 秦希峰³, 王雪林⁴

(1)College of Science, Shandong Jian Zhu University, Jinan 250101, China; (2)School of Physics, Shandong University, Jinan 250100, China; (3)School of Physics, Shandong University, Jinan 250100, China; College of Science, Shandong Jian Zhu University, Jinan 250101, China; (4)School of Physics, Shandong University, Jinan 250100, China; State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2010-01-19 修回日期:2010-03-30 出版日期:2010-11-15 发布日期:2010-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10975094 and 10735070), the National Basic Research Program of China (Grant No. 2010CB832906), Program for New Century Excellent Talents in University, Ministry of Education of China (Grant No. NCET-07-0516) and the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 10422-2007B1).

Investigation of the lateral spread of erbium ions implanted in silicon crystal

Qin Xi-Feng(秦希峰)^a)b), Chen Ming(陈明)^a), Wang Xue-Lin(王雪林)^a)c)^†, Liang Yi(梁毅)^b), and Zhang Shao-Mei(张少梅)^a)

^a School of Physics, Shandong University, Jinan 250100, China; ^b College of Science, Shandong Jian Zhu University, Jinan 250101, China; ^c State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2010-01-19 Revised:2010-03-30 Online:2010-11-15 Published:2010-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10975094 and 10735070), the National Basic Research Program of China (Grant No. 2010CB832906), Program for New Century Excellent Talents in University, Ministry of Education of China (Grant No. NCET-07-0516) and the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 10422-2007B1).

摘要/Abstract

摘要： The erbium ions at energy of 400 keV and dose of 5×10¹⁵ ions/cm² were implanted into silicon single crystals at room temperature at the angles of 0°, 45°and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM'98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes.

Abstract: The erbium ions at energy of 400 keV and dose of 5×10¹⁵ ions/cm² were implanted into silicon single crystals at room temperature at the angles of 0°, 45°and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM'98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes.

Key words: erbium ion implantation, silicon, Rutherford backscattering technique, lateral spread

中图分类号: (Ge and Si)

61.72.uf

秦希峰, 陈明, 王雪林, 梁毅, 张少梅. Investigation of the lateral spread of erbium ions implanted in silicon crystal[J]. 中国物理B, 2010, 19(11): 113403-113501.

Qin Xi-Feng(秦希峰), Chen Ming(陈明), Wang Xue-Lin(王雪林), Liang Yi(梁毅), and Zhang Shao-Mei(张少梅). Investigation of the lateral spread of erbium ions implanted in silicon crystal[J]. Chin. Phys. B, 2010, 19(11): 113403-113501.

参考文献 21

[1]	Lindhard J, Scharff M and Schiott H E 1963 Mat. Fys. Medd. Dan. Vid. Selsk. 33 1
[2]	Zhang Z L 2002 Chin. Phys. 11 389
[3]	Grande P L, Fichtner P F P, Behar M and Zawislak F C 1988 it Nucl. Instr. Methods B 35 17
[4]	Wang K M, Shi B R, Guo H Y, Wang W and Ding P J 1996 Mater. Sci. Eng. B 39 133
[5]	Biersack J P 1982 Z. Phys. A 305 95
[6]	Su L B, Yang W Q, Dong Y J, Xu J and Zhou G Q 2004 Acta Phys. Sin. 53 3956 (in Chinese)
[7]	Furukawa S and Matsumyra H 1973 Appl. Phys. 22 97
[8]	Morvan E, Mestres, Pascual J, Flores D, Vellvehi M and Rebollo J 1999 Mater. Sci. Eng. B 61--62 373
[9]	Wang K M, Shi B R, Cue Nelson, Meng M Q, Lu F, Wang F X , Li W and Shen D Y 2000 J. Phys. D: Appl. Phys. 33 1764
[10]	Chen F, Tan Y and Rodenas A 2008 Opt. Express 16 16209
[11]	Ennen H, Schneider J, Pomrenke G and Axmann A 1983 Appl. Phys. Lett. 43 943
[12]	Lei H B, Yang Q Q and Wang Q M 1998 Acta Phys. Sin. 47 1201 (in Chinese)
[13]	Przybylinska H, Jantsch W, Suprun-Belevitch, Stepikhova M, Palmetshofer L, Hendorfer G, Kozanecki A, Wilson R J and Sealy B J 1996 Phys. Rev. B 54 2532
[14]	Chen C Y, Chen W D, Wang Y Q, Song S F and Xu Z J 2003 it Acta Phys. Sin. 52 736 (in Chinese)
[15]	Ding W C, Liu Y, Zhang Y, Guo J C, Zuo Y H, Cheng B W, Yu J Z and Wang Q M 2009 Chin. Phys. B 18 3044
[16]	Hansson G V, Du W X, Elfving A and Duteil F 2001 Appl. Phys. Lett. 78 2104
[17]	Wang J Z, Shi Z Q, Lou H N, Zhang X L, Zuo Z W, Pu L, Ma E, Zhang R, Zheng Y L, Lu F and Shi Y 2009 Acta Phys. Sin. 58 4243 (in Chinese)
[18]	Palmetshofer L, Gritsch M and Hobler G 2001 Mater. Sci. Eng. B 81 83
[19]	Li Y, Tan C, Xia Y, Zhang J, Xue C, Xu H and Liu P 2000 it Appl. Phys. A 71 689
[20]	Ziegler J F http://www.srim.org
[21]	Chu W K, Mayer J W and Nicolet M A 1978 Backscattering Spectrometry (New York: Academic) Chap 5, p137

Investigation of the lateral spread of erbium ions implanted in silicon crystal

Investigation of the lateral spread of erbium ions implanted in silicon crystal

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