Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

doi:10.1088/1674-1056/25/12/126104

中国物理B ›› 2016, Vol. 25 ›› Issue (12): 126104-126104.doi: 10.1088/1674-1056/25/12/126104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

Chao He(何超), Zhi Liu(刘智), Bu-Wen Cheng(成步文)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2016-06-15 修回日期:2016-08-21 出版日期:2016-12-05 发布日期:2016-12-05
通讯作者: Bu-Wen Cheng E-mail:cbw@semi.ac.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176013 and 61036003), and the Science Fund from Beijing Science and Technology Commission, China (Grant No. Z151100003315019).

Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

Chao He(何超), Zhi Liu(刘智), Bu-Wen Cheng(成步文)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2016-06-15 Revised:2016-08-21 Online:2016-12-05 Published:2016-12-05
Contact: Bu-Wen Cheng E-mail:cbw@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176013 and 61036003), and the Science Fund from Beijing Science and Technology Commission, China (Grant No. Z151100003315019).

摘要/Abstract

摘要：

We report a lateral Ge-on-Si ridge waveguide light emitting diode (LED) grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Direct-bandgap electroluminescence (EL) of Ge waveguide under continuous current is observed at room temperature. The heat-enhancing luminescence and thermal radiation-induced superlinear increase of edge output optical power are found. The spontaneous emission and thermal radiation based on the generalized Planck radiation law are calculated and fit very well to the experimental results. The Ge waveguides with different lengths are studied and the shorter one shows stronger EL intensity.

关键词: Ge/Si, waveguide, electroluminescence, thermal radiation

Abstract:

Key words: Ge/Si, waveguide, electroluminescence, thermal radiation

中图分类号: (Ge and Si)

61.72.uf

42.79.Gn (Optical waveguides and couplers) 78.60.Fi (Electroluminescence) 44.40.+a (Thermal radiation)

何超, 刘智, 成步文. Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si[J]. 中国物理B, 2016, 25(12): 126104-126104.

Chao He(何超), Zhi Liu(刘智), Bu-Wen Cheng(成步文). Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si[J]. Chin. Phys. B, 2016, 25(12): 126104-126104.

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Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

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