Photoluminescence evolution in self-ion-implanted and annealed silicon

doi:10.1088/1674-1056/18/11/048

中国物理B ›› 2009, Vol. 18 ›› Issue (11): 4906-4911.doi: 10.1088/1674-1056/18/11/048

Photoluminescence evolution in self-ion-implanted and annealed silicon

王茺¹, 杨瑞东¹, 李亮¹, 熊飞¹, 杨宇²

(1)Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; (2)Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China;School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA

收稿日期:2008-12-16 修回日期:2009-04-24 出版日期:2009-11-20 发布日期:2009-11-20
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos 60567001 and 10964016), the study-abroad program and the Key Project of Natural Science Foundation of Yunnan Province, China (Grant No 2008CC012).

Photoluminescence evolution in self-ion-implanted and annealed silicon

Yang Yu(杨宇)^a)b)^†, Wang Chong(王茺)^a)^‡, Yang Rui-Dong(杨瑞东)^a), Li Liang(李亮)^a), Xiong Fei(熊飞)^a), and Bao Ji-Ming^b)

^a Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; ^b School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA

Received:2008-12-16 Revised:2009-04-24 Online:2009-11-20 Published:2009-11-20
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos 60567001 and 10964016), the study-abroad program and the Key Project of Natural Science Foundation of Yunnan Province, China (Grant No 2008CC012).

摘要/Abstract

摘要： Si⁺ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950~℃ and then characterized by using the photoluminescence (PL) technique at different recorded temperatures (RETs). Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant W^\rm TA and Si^\rm TO peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800~\du, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D_1 and D₂ bands, can be observed at a temperature as high as 280~K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.

Abstract: Si⁺ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950 ℃ and then characterized by using the photoluminescence (PL) technique at different recorded temperatures (RETs). Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant W^TA and Si^TO peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800 ℃, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D₁ and D₂ bands, can be observed at a temperature as high as 280 K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.

Key words: photoluminescence, silicon, self-ion-implanted, defects

中图分类号: (Elemental semiconductors)

78.55.Ap

81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 61.72.uf (Ge and Si) 71.55.Cn (Elemental semiconductors) 61.72.Hh (Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))

杨宇, 王茺, 杨瑞东, 李亮, 熊飞. Photoluminescence evolution in self-ion-implanted and annealed silicon[J]. 中国物理B, 2009, 18(11): 4906-4911.

Yang Yu(杨宇), Wang Chong(王茺), Yang Rui-Dong(杨瑞东), Li Liang(李亮), Xiong Fei(熊飞), and Bao Ji-Ming. Photoluminescence evolution in self-ion-implanted and annealed silicon[J]. Chin. Phys. B, 2009, 18(11): 4906-4911.

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Photoluminescence evolution in self-ion-implanted and annealed silicon

Photoluminescence evolution in self-ion-implanted and annealed silicon

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