中国物理B ›› 2008, Vol. 17 ›› Issue (5): 1887-1892.doi: 10.1088/1674-1056/17/5/057

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Characteristics of pentacene organic thin film transistor with top gate and bottom contact

袁广才, 徐 征, 赵谡玲, 张福俊, 姜薇薇, 宋丹丹, 朱海娜, 李少彦, 黄金英, 黄 豪, 徐叙瑢   

  1. Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China; Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
  • 收稿日期:2007-09-21 修回日期:2007-10-12 出版日期:2008-05-20 发布日期:2008-05-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60576016), the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412), the Beijing Natural Science Foundation of China (Grant No 2073030),

Characteristics of pentacene organic thin film transistor with top gate and bottom contact

Yuan Guang-Cai(袁广才), Xu Zheng(徐征)†, Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Jiang Wei-Wei(姜薇薇), Song Dan-Dan(宋丹丹), Zhu Hai-Na(朱海娜), Li Shao-Yan(李少彦), Huang Jin-Ying(黄金英), Huang Hao(黄豪), and Xu Xu-Rong(徐叙瑢)   

  1. Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China; Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
  • Received:2007-09-21 Revised:2007-10-12 Online:2008-05-20 Published:2008-05-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60576016), the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412), the Beijing Natural Science Foundation of China (Grant No 2073030),

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摘要： High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO2 deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage VTH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility (μEF) of OTFT device increased with the increase of VDS, but the μEF of OTFT device increased and then decreased with increased VGS when VDS was kept constant. When VDS was --50V, on/off current ratio was 0.48× 105 and subthreshold slope was 0.44V/dec. The μEF was 1.10cm2/(V.s), threshold voltage was --2.71V for the OTFT device.

关键词: thin-film transistor, pentacene, threshold voltage, subthreshold slope

Abstract: High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO2 deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage VTH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility ($\mu$EF) of OTFT device increased with the increase of VDS, but the $\mu$EF of OTFT device increased and then decreased with increased VGS when VDS was kept constant. When VDS was --50V, on/off current ratio was 0.48× 105 and subthreshold slope was 0.44V/dec. The $\mu$EF was 1.10cm2/(V$\cdot$s), threshold voltage was --2.71V for the OTFT device.

Key words: thin-film transistor, pentacene, threshold voltage, subthreshold slope

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)