中国物理B ›› 2006, Vol. 15 ›› Issue (5): 1060-1066.doi: 10.1088/1009-1963/15/5/032

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Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures

张金风, 王冲, 张进城, 郝　跃   

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University, Xi'an 710071, China
  • 收稿日期:2005-06-10 修回日期:2006-02-19 出版日期:2006-05-20 发布日期:2006-05-20
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2002CB311904).

Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures

Zhang Jin-Feng (张金风), Wang Chong (王冲), Zhang Jin-Cheng (张进城), Hao Yue (郝　跃)   

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University, Xi'an 710071, China
  • Received:2005-06-10 Revised:2006-02-19 Online:2006-05-20 Published:2006-05-20
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2002CB311904).

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摘要： It was reported by Shen et al that the two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high density and improved mobility compared with an AlGaN/GaN structure, but the potential of the AlGaN/AlN/GaN structure needs further exploration. By the self-consistent solving of one-dimensional Schr\"{o}dinger--Poisson equations, theoretical investigation is carried out about the effects of donor density (0--1\times 1019cm-3 and temperature (50--500K) on the electron systems in the AlGaN/AlN/GaN and AlGaN/GaN structures. It is found that in the former structure, since the effective \Delta Ec is larger, the efficiency with which the 2DEG absorbs the electrons originating from donor ionization is higher, the resistance to parallel conduction is stronger, and the deterioration of 2DEG mobility is slower as the donor density rises. When temperature rises, the three-dimensional properties of the whole electron system become prominent for both of the structures, but the stability of 2DEG is higher in the former structure, which is also ascribed to the larger effective \Delta Ec. The Capacitance--Voltage (C-V) carrier density profiles at different temperatures are measured for two Schottky diodes on the considered heterostructure samples separately, showing obviously different 2DEG densities. And the temperature-dependent tendency of the experimental curves agrees well with our calculations.

关键词: AlGaN/AlN/GaN, AlGaN/GaN, two-dimensional electron gas, C-V carrier density profile

Abstract: It was reported by Shen et al that the two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high density and improved mobility compared with an AlGaN/GaN structure, but the potential of the AlGaN/AlN/GaN structure needs further exploration. By the self-consistent solving of one-dimensional Schr?dinger--Poisson equations, theoretical investigation is carried out about the effects of donor density (0--1 $\times$ 1019cm-3 and temperature (50--500K) on the electron systems in the AlGaN/AlN/GaN and AlGaN/GaN structures. It is found that in the former structure, since the effective $\Delta E_{\rm c}$ is larger, the efficiency with which the 2DEG absorbs the electrons originating from donor ionization is higher, the resistance to parallel conduction is stronger, and the deterioration of 2DEG mobility is slower as the donor density rises. When temperature rises, the three-dimensional properties of the whole electron system become prominent for both of the structures, but the stability of 2DEG is higher in the former structure, which is also ascribed to the larger effective $\Delta E_{\rm c}$. The Capacitance--Voltage (C-V) carrier density profiles at different temperatures are measured for two Schottky diodes on the considered heterostructure samples separately, showing obviously different 2DEG densities. And the temperature-dependent tendency of the experimental curves agrees well with our calculations.

Key words: AlGaN/AlN/GaN, AlGaN/GaN, two-dimensional electron gas, C-V carrier density profile

中图分类号:  (Surface states, band structure, electron density of states)

  • 73.20.At
71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)) 72.20.Fr (Low-field transport and mobility; piezoresistance) 73.20.Hb (Impurity and defect levels; energy states of adsorbed species) 73.21.-b (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)