中国物理B ›› 2005, Vol. 14 ›› Issue (7): 1439-1443.doi: 10.1088/1009-1963/14/7/030

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Model of transit time for SiGe HBT collector junction depletion-layer

胡辉勇, 张鹤鸣, 戴显英, 贾新章, 崔晓英, 王伟, 区健锋, 王喜媛   

  1. Institute of Microelectronics, Xidian University, Xi'an 710071,China
  • 收稿日期:2004-12-06 修回日期:2005-03-23 出版日期:2005-06-20 发布日期:2005-06-20
  • 基金资助:
    Project supported by the National Defence Pre-research Foundation of China (Grant No 41308060108).

Model of transit time for SiGe HBT collector junction depletion-layer

Hu Hui-Yong (胡辉勇), Zhang He-Ming (张鹤鸣), Dai Xian-Ying (戴显英), Jia Xin-Zhang (贾新章), Cui Xiao-Ying (崔晓英), Wang Wei (王伟), Ou Jian-Feng (区健锋), Wang Xi-Yuan (王喜媛)   

  1. Institute of Microelectronics, Xidian University, Xi'an 710071,China
  • Received:2004-12-06 Revised:2005-03-23 Online:2005-06-20 Published:2005-06-20
  • Supported by:
    Project supported by the National Defence Pre-research Foundation of China (Grant No 41308060108).

PDF (PC)

720

赞

摘要： The transit time through collector junction depletion-layer is an important parameter that influences AC gain and frequency performance. In SiGe heterojunction bipolar transistor (HBT) collector junction, the depletion-layer width is given in three cases. The models of collector depletion-layer transit time, considering the collector current densities and base extension effect, are established and simulated using MATLAB. The influence of the different collector junction bias voltage, collector concentration of As or P dopant and collector width on collector junction transit time is quantitatively studied. When the collector junction bias voltage, collector doping concentration and collector width are large, the transit time is quite long. And, from the results of simulations, the influence of the collector depletion-layer transit time on frequency performance is considerable in SiGe HBT with a thin base, so it could not be ignored.

Abstract: The transit time through collector junction depletion-layer is an important parameter that influences AC gain and frequency performance. In SiGe heterojunction bipolar transistor (HBT) collector junction, the depletion-layer width is given in three cases. The models of collector depletion-layer transit time, considering the collector current densities and base extension effect, are established and simulated using MATLAB. The influence of the different collector junction bias voltage, collector concentration of As or P dopant and collector width on collector junction transit time is quantitatively studied. When the collector junction bias voltage, collector doping concentration and collector width are large, the transit time is quite long. And, from the results of simulations, the influence of the collector depletion-layer transit time on frequency performance is considerable in SiGe HBT with a thin base, so it could not be ignored.

Key words: SiGe HBT, collector depletion-layer transit time

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
85.30.De (Semiconductor-device characterization, design, and modeling)