中国物理B ›› 2003, Vol. 12 ›› Issue (1): 89-93.doi: 10.1088/1009-1963/12/1/316

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Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs

王守国, 张义门, 张玉明   

  1. Institute of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2002-04-19 修回日期:2002-09-24 出版日期:2003-01-20 发布日期:2003-01-20
  • 基金资助:
    Project supported by the National Defence Pre-Research Foundation of China (Grant No 8.1.7.3).

Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs

Wang Shou-Guo (王守国)ab, Zhang Yi-Men (张义门)a, Zhang Yu-Ming (张玉明)a   

  1. a  Institute of Microelectronics, Xidian University, Xi'an 710071, China; b Department of Electronic Science, Northwest University, Xi'an 710069, China
  • Received:2002-04-19 Revised:2002-09-24 Online:2003-01-20 Published:2003-01-20
  • Supported by:
    Project supported by the National Defence Pre-Research Foundation of China (Grant No 8.1.7.3).

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摘要： The effects of incomplete ionization of nitrogen in 4H-SiC have been investigated. Poisson's equation is numerically analysed by considering the effects of Poole--Frenkel, and the effects of the potential on $N^+_\dd$ (the concentration of ionized donors) and $n$ (the concentration of electrons). The pinch-off voltages of the uniform and the ion-implanted channels of 4H-SiC metal-semiconductor field-effect transistors (MESFETs) and the capacitance of the gate are given at different temperatures. Both the Poole--Frenkel effect and the potential have influence on the pinch-off voltage $V_{\rm p}$ of 4H-SiC MESFETs. Although the $C$-$V$ characteristics of the ion-implanted and the uniform channel of 4H-SiC MESFETs have a clear distinction, the effects of incomplete ionization on the $C$-$V$ characteristics are not significant.

Abstract: The effects of incomplete ionization of nitrogen in 4H-SiC have been investigated. Poisson's equation is numerically analysed by considering the effects of Poole--Frenkel, and the effects of the potential on $N^+_{\rm d}$ (the concentration of ionized donors) and $n$ (the concentration of electrons). The pinch-off voltages of the uniform and the ion-implanted channels of 4H-SiC metal-semiconductor field-effect transistors (MESFETs) and the capacitance of the gate are given at different temperatures. Both the Poole--Frenkel effect and the potential have influence on the pinch-off voltage $V_{\rm p}$ of 4H-SiC MESFETs. Although the $C$-$V$ characteristics of the ion-implanted and the uniform channel of 4H-SiC MESFETs have a clear distinction, the effects of incomplete ionization on the $C$-$V$ characteristics are not significant.

Key words: silicon carbide, ion implantation, pinch-off voltage, $C$-$V$ characteristics

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.40.Ry (Impurity doping, diffusion and ion implantation technology) 72.20.Ht (High-field and nonlinear effects)