[1] |
Xin-Chao Yang(杨鑫超), Qun Wei(魏群), Mei-Guang Zhang(张美光), Ming-Wei Hu(胡明玮), Lin-Qian Li(李林茜), and Xuan-Min Zhu(朱轩民). A new direct band gap silicon allotrope o-Si32[J]. 中国物理B, 2022, 31(2): 26104-026104. |
[2] |
Xinxin Li(李欣欣), Zhen Deng(邓震), Sen Wang(王森), Jinbiao Liu(刘金彪), Jun Li(李俊), Yang Jiang(江洋), Ziguang Ma(马紫光), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘). Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation[J]. 中国物理B, 2021, 30(9): 96104-096104. |
[3] |
Shuang Sun(孙爽), Jian-Huan Wang(王建桓), Bao-Tong Zhang(张宝通), Xiao-Kang Li(李小康), Qi-Feng Cai(蔡其峰), Xia An(安霞), Xiao-Yan Xu(许晓燕), Jian-Jun Zhang(张建军), and Ming Li(黎明). Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology[J]. 中国物理B, 2021, 30(7): 78104-078104. |
[4] |
何超, 刘智, 成步文. Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si[J]. 中国物理B, 2016, 25(12): 126104-126104. |
[5] |
黄诗浩, 李成, 陈城钊, 王尘, 谢文明, 林抒毅, 邵明, 聂明星, 陈彩云. Properties of n-Ge epilayer on Si substrate with in-situ doping technology[J]. 中国物理B, 2016, 25(6): 66601-066601. |
[6] |
黄巍, 陆超, 余珏, 魏江镔, 陈超文, 汪建元, 徐剑芳, 王尘, 李成, 陈松岩, 刘春莉, 赖虹凯. High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature[J]. 中国物理B, 2016, 25(5): 57304-057304. |
[7] |
刘悦, 朱浩楠, 裴子栋, 孔勇发, 许京军. Molecular dynamic simulations of surface morphology and pulsedlaser deposition growth of lithium niobate thin filmson silicon substrate[J]. 中国物理B, 2015, 24(5): 56802-056802. |
[8] |
孙高迪, 董林玺, 薛忠营, 陈达, 郭庆磊, 母志强. Strain analysis of free-standing strained silicon-on-insulator nanomembrane[J]. , 2015, 24(3): 36801-036801. |
[9] |
云全新, 黎明, 安霞, 林猛, 刘朋强, 李志强, 张冰馨, 夏宇轩, 张浩, 张兴, 黄如, 王阳元. Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor[J]. 中国物理B, 2014, 23(11): 118504-118504. |
[10] |
云全新, 黎明, 安霞, 林猛, 刘朋强, 李志强, 张冰馨, 夏宇轩, 张浩, 张兴, 黄如, 王阳元. Experimental clarification of orientation dependence of germanium PMOSFETs with Al2O3/GeOx/Ge gate stack[J]. 中国物理B, 2014, 23(11): 118506-118506. |
[11] |
何超, 刘智, 张旭, 黄文奇, 薛春来, 成步文. Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature[J]. 中国物理B, 2014, 23(11): 116103-116103. |
[12] |
Ramin Yousefi, Mohsen Cheragizade, Farid Jamali-Sheini, M. R. Mahmoudian, Abdolhossein Saaédi, Nay Ming Huang. Influences of anionic and cationic dopants on the morphology andoptical properties of PbS nanostructures[J]. , 2014, 23(10): 108101-108101. |
[13] |
孙家宝, 唐晓雨, 杨周伟, 施毅, 赵毅. Retarded thermal oxidation of strained Si substrate[J]. 中国物理B, 2014, 23(6): 66103-066103. |
[14] |
孙家宝, 杨周伟, 耿阳, 卢红亮, 吴汪然, 叶向东, 张卫, 施毅, 赵毅. Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation[J]. 中国物理B, 2013, 22(6): 67701-067701. |
[15] |
秦希峰, 陈明, 王雪林, 梁毅, 张少梅. Investigation of the lateral spread of erbium ions implanted in silicon crystal[J]. 中国物理B, 2010, 19(11): 113403-113501. |