INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

doi:10.1088/1009-1963/10/7/313

中国物理B ›› 2001, Vol. 10 ›› Issue (7): 650-654.doi: 10.1088/1009-1963/10/7/313

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

谢大韬¹, 程国安², 肖志松³, 张通和³, 徐飞⁴, 顾岚岚⁴

(1)Department of Chemistry, Peking University, Beijing 100871, China; (2)Department of Materials Science and Engineering, Nanchang University, Nanchang 330047, China; (3)Key Laboratory in University for Radiation Beam Technology and Materials Modification, Beijing Normal University; Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center; Beijing 100875, China; (4)Surface Physics Laboratory, Fudan University, Shanghai 200433, China

收稿日期:2001-01-18 修回日期:2000-12-16 出版日期:2001-07-15 发布日期:2005-06-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 59671051)

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

Xiao Zhi-song (肖志松)^a, Xu Fei (徐飞)^d, Zhang Tong-he (张通和)^a, Cheng Guo-an (程国安)^b, Xie Da-tao (谢大韬)^c, Gu Lan-lan (顾岚岚)^d

^a Key Laboratory in University for Radiation Beam Technology and Materials Modification, Beijing Normal University; Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center; Beijing 100875, China; ^b Department of Materials Science and Engineering, Nanchang University, Nanchang 330047, China; ^c Department of Chemistry, Peking University, Beijing 100871, China; ^d Surface Physics Laboratory, Fudan University, Shanghai 200433, China

Received:2001-01-18 Revised:2000-12-16 Online:2001-07-15 Published:2005-06-12
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 59671051)

摘要/Abstract

摘要： Erbium-doped silicon has been fabricated by ion implantation performed on a metal vapour vacuum arc ion source. After rapid thermal annealing (RTA), 1.54μm photoluminescence was observed at 77K. Rutherford backscattering spectrum indicated that Er ions are mainly distributed near the surface of the samples, and Er concentration exceeded 10²¹cm^-3. Needle nanometre crystalline silicon (nc-Si) was formed on the substrate surface. Band edge emission spectrum at 10K verified that the minority carrier lifetime increased upon RTA. The photocarrier mediated processes enabled energy transferring from nc-Si (or c-Si) to the Er³⁺ ions and resulted in light emission of 1.54μm.

Abstract: Erbium-doped silicon has been fabricated by ion implantation performed on a metal vapour vacuum arc ion source. After rapid thermal annealing (RTA), 1.54μm photoluminescence was observed at 77K. Rutherford backscattering spectrum indicated that Er ions are mainly distributed near the surface of the samples, and Er concentration exceeded 10²¹cm^-3. Needle nanometre crystalline silicon (nc-Si) was formed on the substrate surface. Band edge emission spectrum at 10K verified that the minority carrier lifetime increased upon RTA. The photocarrier mediated processes enabled energy transferring from nc-Si (or c-Si) to the Er³⁺ ions and resulted in light emission of 1.54μm.

Key words: erbium, silicon, ion implantation, photoluminescence

中图分类号: (Ge and Si)

61.72.uf

78.55.Ap (Elemental semiconductors) 68.49.Sf (Ion scattering from surfaces (charge transfer, sputtering, SIMS))

肖志松, 徐飞, 张通和, 程国安, 谢大韬, 顾岚岚. INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION[J]. 中国物理B, 2001, 10(7): 650-654.

Xiao Zhi-song (肖志松), Xu Fei (徐飞), Zhang Tong-he (张通和), Cheng Guo-an (程国安), Xie Da-tao (谢大韬), Gu Lan-lan (顾岚岚). INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION[J]. Chinese Physics, 2001, 10(7): 650-654.

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INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

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