中国物理B ›› 1995, Vol. 4 ›› Issue (2): 139-146.doi: 10.1088/1004-423X/4/2/009
康俊勇, 黄启圣
KANG JUN-YONG (康俊勇), HUANG QI-SHENG (黄启圣)
摘要: Ge-doped GaAs single crystals have been grown by liquid-encapsulated Czochralski method in absence and presence of a magnetic field of 4000Gauss. By means of high op-tical efficiency photoluminescence, spectra of the grown crystals at room temperature were obtained, which consist of two emission bands A and B at 1.39-1.42eV and 0.97-1.05eV, respectively. Comparing the photoluminescence mappings with microphotographs of etched wafers, Hall effect results and electron probe microanalyses of the n- and p-type crystals with different Ge concentrations, we considered that the emission bands A and B originate from Ge-related acceptor and donor complexes, respectively. The complexes were formed during crystal growth, mainly due to temperature fluctuations in molten Ge-doped GaAs. The concentrations and homogeneities of the defects can be improved by the application of a magnetic field during crystal growth to suppress the temperature fluctuation.
中图分类号: (Ge and Si)